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Semiconductor device comprising oxide semiconductor

  • US 10,153,378 B2
  • Filed: 09/11/2015
  • Issued: 12/11/2018
  • Est. Priority Date: 07/22/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer including a channel formation region; and

    a gate electrode layer overlapping with the oxide semiconductor layer with a gate insulating film interposed therebetween,wherein the oxide semiconductor layer contains at least four kinds of elements of indium, gallium, zinc, and oxygen,wherein a composition ratio of indium is twice or more a composition ratio of gallium and a composition ratio of zinc,wherein the composition ratio of zinc is larger than the composition ratio of gallium,wherein each of the composition ratios is represented by atomic percentage, andwherein the oxide semiconductor layer includes a c-axis aligned crystal region.

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