Optoelectronic component

• US 10,153,414 B2
• Filed: 03/18/2016
• Issued: 12/11/2018
• Est. Priority Date: 03/20/2015
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Halbritter, Hubert, Goeoetz, Britta
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US15/559,946
• Publication Number:
  US 20180076366A1
• Time in Patent Office: 998 Days
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.

Claims

1. An optoelectronic component comprising:

an optoelectronic semiconductor chip configured to emit electromagnetic radiation comprising a wavelength from a first spectral range,

a wavelength-converting element configured to convert electromagnetic radiation comprising a wavelength from the first spectral range into electromagnetic radiation comprising a wavelength from a second spectral range, and

a reflective element comprising a first reflectivity in the first spectral range and a second reflectivity in the second spectral range,

wherein the first spectral range is below 1100 nm, and

the second spectral range is above 1200 nm.

2. The optoelectronic component according to claim 1,

wherein the reflective element is arranged between the optoelectronic semiconductor chip and the wavelength-converting element, and

the first reflectivity is less than the second reflectivity.

3. The optoelectronic component according to claim 2, wherein the reflective element is arranged on a radiation emission face of the optoelectronic semiconductor chip.

4. The optoelectronic component according to claim 1,

wherein the wavelength-converting element is arranged between the optoelectronic semiconductor chip and the reflective element, and

the first reflectivity is greater than the second reflectivity.

5. The optoelectronic component according to claim 4, wherein the reflective element is arranged on a carrier plate.

6. The optoelectronic component according to claim 5, wherein the carrier plate comprises silicon.

7. The optoelectronic component according to claim 4, wherein the reflective element is applied on a top side of the wavelength-converting element.

8. The optoelectronic component according to claim 4,

wherein the optoelectronic component comprises a further reflective element, arranged between the optoelectronic semiconductor chip and the wavelength-converting element, and

the further reflective element comprises a lower reflectivity in the first spectral range than in the second spectral range.

9. The optoelectronic component according to claim 1, wherein the reflective element is configured as a Bragg mirror.

10. The optoelectronic component according to claim 1, wherein the optoelectronic semiconductor chip is embedded into the wavelength-converting element.

11. The optoelectronic component according to claim 1, wherein the wavelength-converting element comprises quantum dots.