Systems and methods for color binning

• US 10,154,209 B2
• Filed: 12/30/2016
• Issued: 12/11/2018
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Original Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Inventors: Tian, Hui, Lee, Jess Jan Young, Della Nave, Pierre Henri Rene
• Primary Examiner(s): Lee, John
• Application Number:
  US15/395,666
• Publication Number:
  US 20170111598A1
• Time in Patent Office: 711 Days
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/46 by combining or binning pixels
• CPC Class Codes: H04N 25/57 Control of the dynamic range
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

Claims

1. An image sensor, comprising:

a semiconductor substrate;

an array of pixel regions, each pixel region comprising an optically sensitive layer over the substrate, the plurality of pixel regions comprising first pixel regions, having multiple subpixel regions for separate wavebands within a visible spectral range, and second pixel regions for an infrared spectral range;

pixel circuits respectively coupled to the pixel regions, each pixel circuit comprising a readout circuit and at least one charge store, wherein the pixel circuits coupled to the at least the first pixel regions comprise multiple, respective charge stores for the multiple subpixel regions; and

circuitry operative in a first mode to cause the pixel circuits to read out charges from the subpixel regions in each of the first pixel regions into the respective charge stores within each of the first pixel regions, and operative in a second mode to bin together charges from a plurality of the subpixel regions for the same waveband from a group of the first pixel regions to a shared charge store, while the charges from the second pixel regions are read out to the respective charge stores without binning.

2. The image sensor according to claim 1, wherein the subpixel regions of each of the first pixel regions comprise three subpixel regions, which are sensitive to red, green, and blue light, respectively.

3. The image sensor according to claim 1, wherein the second pixel regions are not divided into subpixel regions.

4. The image sensor according to claim 1, wherein the first pixel regions in the group from which the charges are binned together from the plurality of the subpixel regions are mutually adjacent.