LED for plant illumination
First Claim
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1. An epitaxial wafer for a plant lighting light-emitting diode (LED), comprising:
- a PN junction light-emitting portion; and
a window layer substantially transparent to light emitted from the light-emitting portion and also configured to have a current spreading function;
wherein;
the PN junction light-emitting portion comprises a strained light-emitting layer with a component formula of GaXIn(1-x)AsYP(1-Y), 0<
X<
1 and 0<
Y≤
0.05 such that the light is suitable for plant illumination;
the PN junction light-emitting portion comprises;
a first red-light epitaxial laminated layer;
a DBR semiconductor laminated layer; and
a second red-light epitaxial laminated layer,wherein the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and
the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer and a second P-type ohmic contact layer.
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Abstract
A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.
6 Citations
7 Claims
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1. An epitaxial wafer for a plant lighting light-emitting diode (LED), comprising:
-
a PN junction light-emitting portion; and a window layer substantially transparent to light emitted from the light-emitting portion and also configured to have a current spreading function; wherein; the PN junction light-emitting portion comprises a strained light-emitting layer with a component formula of GaXIn(1-x)AsYP(1-Y), 0<
X<
1 and 0<
Y≤
0.05 such that the light is suitable for plant illumination;the PN junction light-emitting portion comprises; a first red-light epitaxial laminated layer; a DBR semiconductor laminated layer; and a second red-light epitaxial laminated layer, wherein the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer and a second P-type ohmic contact layer. - View Dependent Claims (2, 3, 4, 5)
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6. A light-emitting system for plant lighting, comprising a plurality of light-emitting diode (LED) chips, each chip comprising:
a PN junction light-emitting portion; and a window layer substantially transparent to light emitted from the light-emitting portion and also configured to have a current spreading function; wherein; the PN junction light-emitting portion comprises a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y), 0<
X<
1 and 0<
Y≤
0.05 such that the light is suitable for plant illumination;the PN junction light-emitting portion comprises; a first red-light epitaxial laminated layer; a DBR semiconductor laminated layer; a second red-light epitaxial laminated layer; and a conductive bonding substrate; wherein; the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer and a second P-type ohmic contact layer; a light-emitting area of the first red-light epitaxial laminated layer is less than a light-emitting area of the second red-light epitaxial laminated layer; the first N-type ohmic contact layer is provided with a first electrode; between the first P-type ohmic contact layer and the second N-type ohmic contact layer is provided with an electronic-connected structure; and the second P-type ohmic contact layer is provided with a second electrode. - View Dependent Claims (7)
Specification