MEMS devices and fabrication methods thereof

• US 10,155,655 B2
• Filed: 09/16/2016
• Issued: 12/18/2018
• Est. Priority Date: 10/12/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chu, Chia-Hua, Cheng, Chun-Wen, Lee, Te-Hao, Lin, Chung-Hsien
• Primary Examiner(s): Nicely, Joseph C
• Assistant Examiner(s): Vuong, Thai T
• Application Number:
  US15/268,282
• Publication Number:
  US 20170001860A1
• Time in Patent Office: 823 Days
• Field of Search: 257415
• CPC Class Codes: B81B 2203/04 Electrodes
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.

Claims

1. A semiconductor device comprising:

a carrier having a plurality of cavities;

a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises;

a shielding layer on the carrier and coupled to ground;

a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate; and

a moving element over the bottom electrode; and

a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.

2. The semiconductor device of claim 1, wherein:

the MEMS substrate comprises a plurality of air channels coupled to the cavities of the carrier.

3. The semiconductor device of claim 1, wherein:

the shielding layer is formed of polysilicon; and

the bottom electrode is formed of polysilicon.

4. The semiconductor device of claim 1, further comprising:

an oxide layer over and in contact with the shielding layer.

5. The semiconductor device of claim 4, wherein:

the plurality of vias extend through the oxide layer.

6. The semiconductor device of claim 1, wherein:

the shielding layer is in contact with the carrier.

7. The semiconductor device of claim 1, further comprising:

a conductive layer formed between the semiconductor substrate and the MEMS substrate, wherein the conductive layer is thinner than the MEMS substrate.

8. The semiconductor device of claim 1, further comprising:

an anchor region formed adjacent to the bottom electrode of the MEMS substrate, and wherein three sides of the anchor region are wrapped by a polysilicon layer.

9. The semiconductor device of claim 8, wherein:

the polysilicon layer is in contact with at least one of the plurality of vias.

10. The semiconductor device of claim 1, further comprising:

a mechanical bump partially embedded in the moving element, wherein the mechanical bump is formed of polysilicon.

11. An apparatus comprising:

a carrier having a plurality of cavities, wherein a first opening of a first cavity is covered by a bonding interface layer and a second opening of the first cavity is exposed through a gap between two adjacent bonding interface layers;

a micro-electro-mechanical system (MEMS) device bonded on the carrier, wherein the MEMS device comprises;

the bonding interface layer on a first side of the MEMS device, wherein the bonding interface layer is configured to be a shielding layer;

a dielectric layer on the bonding interface layer;

a bottom electrode over the dielectric layer;

a plurality of vias coupled between the bonding interface layer and the bottom electrode of the MEMS device;

a first moving element over the bottom electrode; and

a semiconductor substrate bonded on the MEMS device, wherein the semiconductor substrate comprises a top electrode, and wherein the first moving element is between the bottom electrode and the top electrode.

12. The apparatus of claim 11, wherein:

the bottom electrode is formed of polysilicon; and

the bonding interface layer is formed of polysilicon.

13. The apparatus of claim 11, further comprising:

a second moving element between the bottom electrode and the top electrode, wherein a mechanical bump is partially embedded in the second moving element, and wherein the mechanical bump is formed of polysilicon.

14. The apparatus of claim 11, wherein the bonding interface layer in contact with the carrier, and wherein:

the bonding interface layer covers at least one of the plurality of cavities.

15. The apparatus of claim 11, wherein:

the dielectric layer is formed of oxide.

16. The apparatus of claim 11, further comprising:

an anchor region formed over the bottom electrode, and wherein three sides of the anchor region are wrapped by a polysilicon layer.

17. The apparatus of claim 11, wherein:

the plurality of vias are in contact with the bonding interface layer and the bottom electrode.

18. A device comprising:

a carrier having a plurality of cavities;

a micro-electro-mechanical system (MEMS) substrate having a first side bonded on the carrier, wherein the MEMS substrate comprises;

a shielding layer over the first side and coupled to ground;

a plurality of vias connected to the shielding layer;

a moving element between a top electrode and a bottom electrode of the MEMS substrate, wherein the plurality of vias is connected between the shielding layer and the bottom electrode of the MEMS substrate;

an anchor region formed adjacent to the first side of the MEMS substrate, and wherein three sides of the anchor region are wrapped by a polysilicon layer; and

a plurality of bonding pads on a second side of the MEMS substrate; and

a semiconductor substrate bonded on the MEMS substrate.

19. The device of claim 18, wherein:

the plurality of cavities of the carrier includes a first opening covered by a bonding interface layer and a second opening exposed through a gap between two adjacent bonding interface layers.

20. The device of claim 18, wherein:

the shielding layer is directly connected to ground.