Piezoresistive pressure sensor

• US 10,156,489 B2
• Filed: 01/25/2017
• Issued: 12/18/2018
• Est. Priority Date: 02/02/2016
• Status: Active Grant

• Current Assignee: Asia Pacific Microsystems Incorporated (Unimicron Technology Corporation)
• Original Assignee: Asia Pacific Microsystems Incorporated (Unimicron Technology Corporation)
• Inventors: Yin, Hung-Lin, Chiang, Cheng-Yi, Huang, Yu-Che
• Primary Examiner(s): Ha, Nguyen Q.
• Application Number:
  US15/414,956
• Publication Number:
  US 20170219449A1
• Time in Patent Office: 692 Days
• CPC Class Codes: G01L 9/0044 Constructional details of non-semiconductive diaphragms
• CPC Class Codes: G01L 9/0047 Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: G01L 9/06 of piezo-resistive devices

Abstract

A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

Claims

1. A piezoresistive pressure sensor comprising

a substrate having a cavity;

a silicon device layer attached to the substrate, the silicon device layer having a recess, the silicon device layer comprising

a diaphragm having a top surface; and

a support element having a top surface;

the top surface of the diaphragm being connected to the top surface of the support element by one or more side surfaces;

the recess of the silicon device layer being defined by the top surface of the diaphragm and the one or more side surfaces;

each of a plurality of piezoresistive regions being on the top surface of the diaphragm, extending to a respective side surface of the one or more side surfaces and further extending to the top surface of the support element; and

a plurality of conductive regions being on the top surface of the support element, the plurality of conductive regions not extending to the one or more side surfaces nor the top surface of the diaphragm;

wherein said each of the plurality of piezoresistive regions is connected to two respective conductive regions of the plurality of conductive regions;

wherein the plurality of piezoresistive regions have a first ion dosage concentration;

wherein the plurality of conductive regions have a second ion dosage concentration; and

wherein the second ion dosage concentration is greater than the first ion dosage concentration.

2. The piezoresistive pressure sensor of claim 1, wherein a centroid of the recess of the silicon device layer and a centroid of the cavity of the substrate are aligned in a first direction parallel to a normal direction of the top surface of the diaphragm.

3. The piezoresistive pressure sensor of claim 2, wherein the recess of the silicon device layer is of a trapezoidal prism shape having a top and bottom surfaces perpendicular to the first direction;

wherein an area of the top surface of the trapezoidal prism shape is greater than an area of the bottom surface of the trapezoidal prism shape; and

wherein the area of the bottom surface of the trapezoidal prism shape equals an area of the top surface of the diaphragm.

4. The piezoresistive pressure sensor of claim 1, wherein the one or more side surfaces are perpendicular to the top surface of the diaphragm.

5. The piezoresistive pressure sensor of claim 1, wherein an angle between the one or more side surfaces and the top surface of the diaphragm is greater than ninety degrees.

6. The piezoresistive pressure sensor of claim 1, wherein a thickness of the diaphragm is smaller than a thickness of the support element;

wherein the thickness of the diaphragm is less than or equal to five micrometers; and

wherein the thickness of the support element is greater than or equal to five micrometers.

7. The piezoresistive pressure sensor of claim 1, wherein an area of the top surface of the diaphragm is smaller than an area of a top surface of the cavity of the substrate.

8. The piezoresistive pressure sensor of claim 1, wherein the first ion dosage concentration is in a range from 10¹⁸ ions/cm³ to 10²⁰ ions/cm³.

9. The piezoresistive pressure sensor of claim 1, wherein the second ion dosage concentration is in a range from 10²⁰ ions/cm³ to 10²² ions/cm³.

10. The piezoresistive pressure sensor of claim 1, wherein the cavity of the substrate is a through hole.

11. The piezoresistive pressure sensor of claim 1, wherein the cavity of the substrate is a closed space.

12. The piezoresistive pressure sensor of claim 1, wherein the top surface of the diaphragm is of a rectangular shape having two opposite long sides and two opposite short sides and wherein a length of one of the two opposite short sides is smaller than or equal to 150 micrometers.

13. The piezoresistive pressure sensor of claim 1 further comprising a protective cover having

a horizontal portion opposite the diaphragm;

and

a vertical portion attached to the support element of the silicon device layer;

wherein the horizontal portion, the vertical portion and the silicon device layer define an enclosed cavity above the diaphragm and the plurality of piezoresistive regions.

14. The piezoresistive pressure sensor of claim 1 further comprising a lumped mass at a center of the top surface of the diaphragm or at a center of a bottom surface of the diaphragm.

15. The piezoresistive pressure sensor of claim 1, wherein each of the plurality of conductive regions is attached to a respective metal welding pad of a plurality of metal welding pads.

16. The piezoresistive pressure sensor of claim 15, wherein the plurality of piezoresistive regions, the plurality of conductive regions and the plurality of metal welding pads form a Wheatstone bridge.

17. The piezoresistive pressure sensor of claim 15, wherein the plurality of piezoresistive regions, the plurality of conductive regions and the plurality of metal welding pads form a Wheatstone half-bridge.

18. The piezoresistive pressure sensor of claim 1, wherein the substrate comprises an insulation layer and a silicon layer;

wherein the silicon device layer is directly attached to the insulation layer of the substrate; and

wherein the insulation layer of the substrate is directly attached to the silicon layer of the substrate.

19. The piezoresistive pressure sensor of claim 1, wherein the top surface of the diaphragm and the plurality of piezoresistive regions form a rotational symmetry of order 2.