Resist underlayer film composition, patterning process, and compound

• US 10,156,788 B2
• Filed: 06/30/2016
• Issued: 12/18/2018
• Est. Priority Date: 07/14/2015
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Hatakeyama, Jun, Kori, Daisuke, Ogihara, Tsutomu
• Primary Examiner(s): CHU, JOHN S Y
• Application Number:
  US15/198,369
• Publication Number:
  US 20170018436A1
• Time in Patent Office: 901 Days
• Field of Search: 4302711, 430326, 430317, 430318, 430323
• CPC Class Codes: C07C 2603/52 containing five condensed rings
• CPC Class Codes: C07C 39/17 containing other rings in addition to the six-membered aromatic rings , e.g. cyclohexylphenol
• CPC Class Codes: C07C 49/665 a keto group being part of a condensed ring system
• CPC Class Codes: C07D 493/10 Spiro-condensed systems
• CPC Class Codes: C08G 8/02 of ketones
• CPC Class Codes: C08G 8/10 with phenol
• CPC Class Codes: C08G 8/20 with polyhydric phenols
• CPC Class Codes: C08G 8/36 by etherifying
• CPC Class Codes: C08L 61/06 of aldehydes with phenols
• CPC Class Codes: C08L 61/12 with polyhydric phenols
• CPC Class Codes: C08L 63/00 Compositions of epoxy resins; Compositions of derivatives of epoxy resins
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.

Claims

1. A resist underlayer film composition for lithography, comprising a compound having an indenofluorene structure, wherein the compound having an indenofluorene structure is one or more compounds selected from the group consisting of:

a compound X shown by the formula (2);

a compound Y in which a plurality of the compounds X is bonded directly or via an arylene group having 6 to 28 carbon atoms and optionally containing an alkylene group having 1 to 10 carbon atoms; and

a condensate obtained by a condensation of a material containing the compound X and/or the compound Y,

2. The resist underlayer film composition according to claim 1, wherein the condensate is a resin having a repeating unit shown by the formula (3),

3. The resist underlayer film composition according to claim 1, further comprising an organic solvent.

4. The resist underlayer film composition according to claim 1, further comprising an acid generator and/or a crosslinking agent.

5. A patterning process for forming a pattern in a substrate by lithography, comprising the steps of:

(A1) forming a resist underlayer film on the substrate from the resist underlayer film composition according to claim 1;

(A2) forming a photoresist film on the resist underlayer film;

(A3) forming a photoresist pattern by subjecting the photoresist film to exposure and development;

(A4) transferring the pattern to the resist underlayer film by dry etching using the photoresist pattern as a mask; and

(A5) processing the substrate by using the resist underlayer film having the transferred pattern as a mask.

6. A patterning process for forming a pattern in a substrate by lithography, comprising the steps of:

(B1) forming a resist underlayer film on the substrate from the resist underlayer film composition according to claim 1;

(B2) forming a metallic middle layer film containing an element selected from the group consisting of silicon, titanium, zirconium, hafnium, tungsten, aluminum, germanium, tin, and chromium on the resist underlayer film;

(B3) forming a photoresist film on the metallic middle layer film;

(B4) forming a photoresist pattern by subjecting the photoresist film to exposure and development;

(B5) transferring the pattern to the metallic middle layer film by dry etching using the photoresist pattern as a mask;

(B6) transferring the pattern to the resist underlayer film by dry etching using the metallic middle layer film having the transferred pattern as a mask; and

(B7) processing the substrate by using the resist underlayer film having the transferred pattern as a mask.

7. A patterning process for forming a pattern in a substrate by lithography, comprising the steps of:

(C1) forming a resist underlayer film on the substrate from the resist underlayer film composition according to claim 1;

(C2) forming a metallic middle layer film containing an element selected from the group consisting of silicon, titanium, zirconium, hafnium, tungsten, aluminum, germanium, tin, and chromium on the resist underlayer film;

(C3) forming an organic antireflective film on the metallic middle layer film;

(C4) forming a photoresist film on the organic antireflective film;

(C5) forming a photoresist pattern by subjecting the photoresist film to exposure and development;

(C6) transferring the pattern to the organic antireflective film and the metallic middle layer film by dry etching using the photoresist pattern as a mask;

(C7) transferring the pattern to the resist underlayer film by dry etching using the metallic middle layer film having the transferred pattern as a mask; and

(C8) processing the substrate by using the resist underlayer film having the transferred pattern as a mask.

8. A patterning process for forming a pattern in a substrate by lithography, comprising the steps of:

(D1) forming a resist underlayer film on the substrate from the resist underlayer film composition according to claim 1;

(D2) forming a metallic middle layer film containing an element selected from the group consisting of silicon, titanium, zirconium, hafnium, tungsten, aluminum, germanium, tin, and chromium on the resist underlayer film;

(D3) forming a hydrocarbon film on the metallic middle layer film;

(D4) forming a silicon-containing film on the hydrocarbon film;

(D5) forming a photoresist film on the silicon-containing film;

(D6) forming a photoresist pattern by subjecting the photoresist film to exposure and development;

(D7) transferring the pattern to the silicon-containing film by dry etching using the photoresist pattern as a mask;

(D8) transferring the pattern to the hydrocarbon film by dry etching using the silicon-containing film having the transferred pattern as a mask;

(D9) transferring the pattern to the metallic middle layer film by dry etching using the hydrocarbon film having the transferred pattern as a mask;

(D10) transferring the pattern to the resist underlayer film by dry etching using the metallic middle layer film having the transferred pattern as a mask; and

(D11) processing the substrate by using the resist underlayer film having the transferred pattern as a mask.