Illumination devices, and methods of fabricating same

• US 10,157,898 B2
• Filed: 03/21/2017
• Issued: 12/18/2018
• Est. Priority Date: 01/22/2007
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Negley, Gerald H., Van De Ven, Antony Paul
• Primary Examiner(s): REAMES, MATTHEW L
• Application Number:
  US15/464,801
• Publication Number:
  US 20170194298A1
• Time in Patent Office: 637 Days
• CPC Class Codes: H01L 21/2654 in AIIIBV compounds
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 45/30 Driver circuits
• CPC Class Codes: H05B 45/37 Converter circuits
• CPC Class Codes: H05B 45/38 using boost topology

Abstract

A light emitter, comprising a monolithic n-type layer (comprising at least first and second n-type regions), a monolithic p-type layer (comprising at least first and second p-type regions), at least a first isolation region and at least a first electrically conductive via that extends through at least part of the first isolation region. At least part of the first isolation region is between the first n-type region and the second n-type region, and/or least part of the first isolation region is between the first p-type region and the second p-type region.

Claims

1. A light emitter, comprising:

at least a first monolithic n-type layer;

at least a first monolithic p-type layer;

at least one isolation region; and

at least a first electrically conductive via,

the monolithic n-type layer comprising at least a first n-type region and a second n-type region;

the monolithic p-type layer comprising at least a first p-type region and a second p-type region,

the first n-type region and the first p-type region together comprising a first light emitting device,

the second n-type region and the second p-type region together comprising a second light emitting device,

the at least one isolation region electrically isolating at least the first light emitting device from the second light emitting device,

the first electrically conductive via extending through at least the n-type layer and the p-type layer.

2. A light emitter as recited in claim 1, wherein:

the first p-type region has a first surface that defines a first plane, and

the first electrically conductive via extends to a location substantially coplanar with the first plane.

3. A light emitter as recited in claim 1, wherein:

the first light emitting device has a first light emitting device n-contact and a first light emitting device p-contact, and

the second light emitting device has a second light emitting device n-contact and a second light emitting device p-contact.

4. A light emitter as recited in claim 1, wherein:

each light emitting device in the light emitter has its own p-contact and its own n-contact.

5. A light emitter as recited in claim 1, wherein:

each light emitting device in the light emitter is independently electrically connectable.

6. A light emitter, comprising:

an n-type layer;

a p-type layer;

at least one isolation region; and

at least a first electrically conductive via,

the n-type layer comprising a first n-type region, a second n-type region and a third n-type region,

the first n-type region, the second n-type region, and the third n-type region each isolated from each other by the at least one isolation region,

the p-type layer comprising a first p-type region, a second p-type region, and a third p-type region,

the first p-type region, the second p-type region, and the third p-type region each isolated from each other by the at least one isolation region,

the first n-type region and the first p-type region together comprising a first light emitting device,

the second n-type region and the second p-type region together comprising a second light emitting device,

the third n-type region and the third p-type region together comprising a third light emitting device,

the first electrically conducting via extending through at least part of at least one of the at least one isolation region, the first electrically conducting via electrically connected to the first p-type region.

7. The light emitter of claim 6, wherein the n-type layer is a monolithic layer, and the p-type layer is a monolithic layer.

8. The light emitter of claim 6, wherein the light emitter further comprises a substrate, and the n-type layer and the p-type layer are on the substrate.

9. The light emitter of claim 8, wherein the n-type layer is a monolithic layer, and the p-type layer is a monolithic layer.

10. The light emitter of claim 6, wherein the first electrically conductive via is electrically connected to the n-type layer only through the p-type layer.