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Semiconductor structure and manufacturing method thereof

  • US 10,157,900 B2
  • Filed: 12/15/2016
  • Issued: 12/18/2018
  • Est. Priority Date: 10/23/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor structure, the method comprising:

  • bonding a semiconductor die to a substrate, the substrate having circuitry thereon;

    forming a conductive plug with a first end connected to the substrate;

    disposing a molding compound on the substrate;

    after disposing the molding compound on the substrate, exposing a contact area of a passive surface of the semiconductor die and a contact area of a second end of the conductive plug, wherein the passive surface, the second end, and a surface of the molding compound are at a first same level; and

    after exposing, forming a metal structure on the passive surface of the semiconductor die and the second end of the conductive plug, the metal structure comprising an active portion including a first recess with a first active portion contact area below the first recess and a dummy portion including a second recess with a first dummy portion contact area below the second recess, wherein the forming the metal structure comprises;

    depositing the active portion on the conductive plug with the first active portion contact area being in contact with the contact area of the second end of the conductive plug, the active portion being electrically coupled with the circuitry through the conductive plug; and

    depositing the dummy portion on the semiconductor die with the first dummy portion contact area being in contact with the contact area of the passive surface of the semiconductor die and not being electrically coupled with any circuitry.

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