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Semiconductor device

  • US 10,157,903 B2
  • Filed: 08/23/2017
  • Issued: 12/18/2018
  • Est. Priority Date: 08/31/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first conductive portion, formed at a surface of the semiconductor device, including a plurality of portions, each of the plurality of portions having a first type of conductivity, and each of the plurality of portions extending in a first direction and being arranged in parallel at a distance from each other in a second direction that intersects the first direction;

    a first low concentration layer formed below the first conductive portion with respect to the surface of the semiconductor device, the first low concentration layer having the first type of conductivity and having a lower impurity concentration than the first conductive portion;

    a second conductive portion, formed at the surface of the semiconductor device, including an island portion provided between respective ones of the plurality of portions of the first conductive portion and extending in the first direction, the second conductive portion having a second type of conductivity that is different from the first type of conductivity;

    a second low concentration layer formed below the second conductive portion with respect to the surface of the semiconductor device, the second low concentration layer having the second type of conductivity and having a comparatively lower impurity concentration than the second conductive portion; and

    an insulator formed between the first conductive portion and the second conductive portion, the insulator extending further below the first low concentration layer and into the second low concentration layer from the surface of the semiconductor device.

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