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Semiconductor device including memory cell which includes transistor and capacitor

  • US 10,157,939 B2
  • Filed: 05/11/2017
  • Issued: 12/18/2018
  • Est. Priority Date: 07/22/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,wherein the transistor comprises:

  • an oxide semiconductor film;

    a first electrode layer and a second electrode layer over the oxide semiconductor film;

    a gate insulating film over the oxide semiconductor film; and

    a gate electrode layer over the gate insulating film,wherein the capacitor comprises;

    part of the oxide semiconductor film;

    an insulating film over the part of the oxide semiconductor film; and

    the second electrode layer over the insulating film,wherein the part of the oxide semiconductor film, the insulating film of the capacitor, and the second electrode layer of the capacitor overlap with each other, andwherein the gate insulating film of the transistor is separated from the insulating film of the capacitor.

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