Semiconductor device including memory cell which includes transistor and capacitor
First Claim
1. A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,wherein the transistor comprises:
- an oxide semiconductor film;
a first electrode layer and a second electrode layer over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode layer over the gate insulating film,wherein the capacitor comprises;
part of the oxide semiconductor film;
an insulating film over the part of the oxide semiconductor film; and
the second electrode layer over the insulating film,wherein the part of the oxide semiconductor film, the insulating film of the capacitor, and the second electrode layer of the capacitor overlap with each other, andwherein the gate insulating film of the transistor is separated from the insulating film of the capacitor.
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Abstract
An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit area. A semiconductor device is formed with a material capable of sufficiently reducing off-state current of a transistor, such as an oxide semiconductor material that is a wide-bandgap semiconductor. With the use of a semiconductor material capable of sufficiently reducing off-state current of a transistor, the semiconductor device can hold data for a long time. Furthermore, a wiring layer provided under a transistor, a high-resistance region in an oxide semiconductor film, and a source electrode are used to form a capacitor, thereby reducing the area occupied by the transistor and the capacitor.
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Citations
7 Claims
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1. A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,
wherein the transistor comprises: -
an oxide semiconductor film; a first electrode layer and a second electrode layer over the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode layer over the gate insulating film, wherein the capacitor comprises; part of the oxide semiconductor film; an insulating film over the part of the oxide semiconductor film; and the second electrode layer over the insulating film, wherein the part of the oxide semiconductor film, the insulating film of the capacitor, and the second electrode layer of the capacitor overlap with each other, and wherein the gate insulating film of the transistor is separated from the insulating film of the capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification