Light-emitting device with electrode extending layer

• US 10,157,960 B2
• Filed: 12/15/2015
• Issued: 12/18/2018
• Est. Priority Date: 12/16/2014
• Status: Active Grant

• Current Assignee: Episky Corporation (Xiamem) Ltd.
• Original Assignee: Episky Corporation (Xiamem) Ltd.
• Inventors: Wu, Che-Shiung, Lu, Chan-Yang, Liu, Jian-Ke, Bai, Mei-Ying, Lin, Cong-Hui, Zeng, Xiao-Qiang
• Primary Examiner(s): BRADLEY, STEPHEN M
• Application Number:
  US14/970,519
• Publication Number:
  US 20160172342A1
• Time in Patent Office: 1,099 Days
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.

Claims

1. A light-emitting device, comprising:

a substrate;

a first light-emitting unit formed on the substrate, comprising;

a first conductivity type semiconductor;

a second conductivity type semiconductor;

an active layer formed between the first and the second conductivity type semiconductors; and

an exposed region formed in the first light-emitting unit, exposing the first conductivity type semiconductor;

a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region;

a second electrode extending layer formed on the second conductivity type semiconductor;

a transparent insulator, formed on the first light-emitting unit and filled in the exposed region;

a first electrode formed on the transparent insulator, comprising a first pad and a first extending part extending from the first pad;

a plurality of conductive channel layers formed in the transparent insulator;

wherein one of the plurality of conductive channel layers connects the first extending part and one of the first and the second electrode extending layers;

wherein the first pad does not overlap the one of the first and the second electrode extending layers;

a second light-emitting unit or more light-emitting units separately formed on the substrate, wherein the first light-emitting unit and the second light-emitting unit or more light-emitting units compose a plurality of light-emitting units, and wherein each of the plurality of light-emitting units comprises the first conductivity type semiconductor, the second conductivity type semiconductor, the active layer and the exposed region;

a plurality of the first electrode extending layers and a plurality of the second electrode extending layers formed on the plurality of light-emitting units;

a second electrode;

a trench formed between any two adjacent light-emitting units; and

an electrical connecting layer;

wherein the first electrode is formed on one of the plurality of light-emitting units and the second electrode is formed on another one of the plurality of light-emitting units;

wherein the transparent insulator is formed on the plurality of light-emitting units;

wherein the electrical connecting layer is formed on the transparent insulator, and connects the conductive channel layers on different light-emitting units to electrically connect the plurality of light-emitting units; and

wherein the transparent insulator comprises a top surface opposite to the substrate, and the first electrode, the second electrode and the electrical connecting layer are formed on and contact the top surface.

2. The light-emitting device of claim 1, wherein the transparent insulator is filled in the trench and simultaneously covers the plurality of light-emitting units to form a planar upper surface.

3. The light-emitting device of claim 2, wherein a shortest distance between the planar upper surface and the light-emitting units is more than 10μ

m.

4. The light-emitting device of claim 1, wherein the first and the second electrode extending layers have different conductivity types;

the first electrode electrically connects the electrode extending layers with the same conductivity type or different conductivity types on different light-emitting units via the conductive channel layers; and

the second electrode electrically connects the electrode extending layers with the same conductivity type or different conductivity types on different light-emitting units via the conductive channel layers.

5. The light-emitting device of claim 1, wherein the transparent insulator comprises a multi-layer structure.

6. The light-emitting device of claim 5, wherein the multi-layer structure comprises:

a first transparent insulator formed on side surfaces of the adjacent light-emitting units;

a second transparent insulator, formed on the first transparent insulator and filled in the trench; and

a third transparent insulator, covering the second transparent insulator and the plurality of light-emitting units.

7. The light-emitting device of claim 6, wherein second transparent insulator comprises spin-on-glass (SOG).

8. The light-emitting device of claim 1, wherein a connection of the plurality of light-emitting units comprises a series electrical connection, a parallel electrical connection or a series-parallel electrical connection.

9. The light-emitting device of claim 8, wherein the plurality of light-emitting units forms an AC LED.

10. The light-emitting device of claim 9, further comprising:

a first metal layer formed on a surface of the substrate on which the plurality of light-emitting units is formed; and

a second metal layer formed on the transparent insulator, parallel with and overlapping the first metal layer;

wherein the first metal layer and the second metal layer electrically connect the light-emitting units via the conductive channel layers.

11. The light-emitting device of claim 10, wherein the first metal layer and the second metal layer form a capacitance between the light-emitting units.