Semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising:
- forming a gate electrode layer;
forming a gate insulating layer over the gate electrode layer;
forming an oxide semiconductor layer over the gate electrode layer with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising a channel formation region;
forming a conductive film on the oxide semiconductor layer, the conductive film comprising an alloy including copper and manganese;
heating the conductive film after forming the conductive film;
etching the conductive film to form a first conductive layer and a second conductive layer;
forming an insulating film over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with a portion of the oxide semiconductor layer between the first conductive layer and the second conductive layer.
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Accused Products
Abstract
An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.
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Citations
21 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate electrode layer with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising a channel formation region; forming a conductive film on the oxide semiconductor layer, the conductive film comprising an alloy including copper and manganese; heating the conductive film after forming the conductive film; etching the conductive film to form a first conductive layer and a second conductive layer; forming an insulating film over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with a portion of the oxide semiconductor layer between the first conductive layer and the second conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device comprising:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate electrode layer with the gate insulating layer interposed therebetween, the oxide semiconductor layer comprising a channel formation region; forming a conductive film on the oxide semiconductor layer, the conductive film comprising an alloy including copper and manganese; heating the conductive film after forming the conductive layer; etching the conductive film to form a first conductive layer and a second conductive layer; etching a portion of the oxide semiconductor layer between the first conductive layer and the second conductive layer so that the oxide semiconductor layer is thinner in a region between the first conductive layer and the second conductive layer than in regions below the first conductive layer and the second conductive layer; forming an insulating film over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with a portion of the oxide semiconductor layer between the first conductive layer and the second conductive layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device comprising:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the gate electrode layer with the gate insulating layer interposed therebetween, the first oxide semiconductor layer comprising a channel formation region; forming a second oxide semiconductor layer over the first oxide semiconductor layer; forming a conductive film on the second oxide semiconductor layer, the conductive layer comprising an alloy including copper and manganese; heating the conductive film after forming the conductive layer; etching the conductive film to form a first conductive layer and a second conductive layer; etching a portion of the second oxide semiconductor layer between the first conductive layer and the second conductive layer to form a source region and a drain region; forming an insulating film over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with a portion of the first oxide semiconductor layer between the first conductive layer and the second conductive layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification