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Semiconductor device including oxide semiconductor stacked layers

  • US 10,158,026 B2
  • Filed: 09/12/2016
  • Issued: 12/18/2018
  • Est. Priority Date: 04/13/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode layer over an insulating surface;

    oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers;

    a source electrode layer and a drain electrode layer over the second oxide semiconductor layer;

    a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and

    wherein the second oxide semiconductor layer includes;

    a first region in direct contact with the second insulating layer; and

    a second region in direct contact with the source electrode layer,wherein a thickness of the first region is smaller than a thickness of the second region,wherein the first oxide semiconductor layer comprises indium and gallium,wherein the second oxide semiconductor layer comprises indium and gallium,wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer,wherein the first oxide semiconductor layer comprises a first crystal region,wherein the second oxide semiconductor layer comprises a second crystal region,wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, andwherein a c-axis of a crystal in the second crystal region is parallel to a normal vector of the upper surface of the second oxide semiconductor layer.

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