Semiconductor device including oxide semiconductor stacked layers
First Claim
1. A semiconductor device comprising:
- a first gate electrode layer over an insulating surface;
oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers;
a source electrode layer and a drain electrode layer over the second oxide semiconductor layer;
a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and
wherein the second oxide semiconductor layer includes;
a first region in direct contact with the second insulating layer; and
a second region in direct contact with the source electrode layer,wherein a thickness of the first region is smaller than a thickness of the second region,wherein the first oxide semiconductor layer comprises indium and gallium,wherein the second oxide semiconductor layer comprises indium and gallium,wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer,wherein the first oxide semiconductor layer comprises a first crystal region,wherein the second oxide semiconductor layer comprises a second crystal region,wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, andwherein a c-axis of a crystal in the second crystal region is parallel to a normal vector of the upper surface of the second oxide semiconductor layer.
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Abstract
A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a first gate electrode layer over an insulating surface; oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers; a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and wherein the second oxide semiconductor layer includes; a first region in direct contact with the second insulating layer; and a second region in direct contact with the source electrode layer, wherein a thickness of the first region is smaller than a thickness of the second region, wherein the first oxide semiconductor layer comprises indium and gallium, wherein the second oxide semiconductor layer comprises indium and gallium, wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a first crystal region, wherein the second oxide semiconductor layer comprises a second crystal region, wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, and wherein a c-axis of a crystal in the second crystal region is parallel to a normal vector of the upper surface of the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first gate electrode layer over an insulating surface; oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers; a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and wherein the second oxide semiconductor layer includes; a first region in direct contact with the second insulating layer; and a second region in direct contact with the source electrode layer, wherein a thickness of the first region is smaller than a thickness of the second region, wherein the first oxide semiconductor layer and the second oxide semiconductor layer contain same constituent elements and have different compositions of the constituent elements, wherein the first oxide semiconductor layer comprises indium and gallium, wherein the second oxide semiconductor layer comprises indium and gallium, wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a first crystal region, wherein the second oxide semiconductor layer comprises a second crystal region, wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, and wherein a c-axis of a crystal in the second crystal region is parallel to a normal vector of the upper surface of the second oxide semiconductor layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a first gate electrode layer over an insulating surface; oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers; a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and wherein the second oxide semiconductor layer includes; a first region in direct contact with the second insulating layer; and a second region in direct contact with the source electrode layer, wherein a thickness of the first region is smaller than a thickness of the second region, wherein the first oxide semiconductor layer comprises indium and gallium, wherein the second oxide semiconductor layer comprises indium and gallium, wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a first crystal region, wherein the second oxide semiconductor layer comprises a second crystal region, wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, and wherein a c-axis of a crystal in the second crystal region is substantially parallel to a normal vector of the upper surface of the second oxide semiconductor layer at a location of the crystal. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a first gate electrode layer over an insulating surface; oxide semiconductor stacked layers comprising a first oxide semiconductor layer and a second oxide semiconductor layer, the oxide semiconductor stacked layers overlap with the first gate electrode layer with a first insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers; a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; a second insulating layer over and in direct contact with an upper surface of the second oxide semiconductor layer between the source electrode layer and the drain electrode layer; and wherein the second oxide semiconductor layer includes; a first region in direct contact with the second insulating layer; and a second region in direct contact with the source electrode layer, wherein a thickness of the first region is smaller than a thickness of the second region, wherein the first oxide semiconductor layer and the second oxide semiconductor layer contain same constituent elements and have different compositions of the constituent elements, wherein the first oxide semiconductor layer comprises indium and gallium, wherein the second oxide semiconductor layer comprises indium and gallium, wherein an indium content is lower than or equal to a gallium content in the second oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a first crystal region, wherein the second oxide semiconductor layer comprises a second crystal region, wherein a crystallinity of the first crystal region is different from a crystallinity of the second crystal region, and wherein a c-axis of a crystal in the second crystal region is substantially parallel to a normal vector of the upper surface of the second oxide semiconductor layer at a location of the crystal. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification