Semiconductor light emitting device

• US 10,158,047 B2
• Filed: 04/04/2016
• Issued: 12/18/2018
• Est. Priority Date: 04/03/2015
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Jeon, Soo Kun, Park, Jun Chun, Choi, Il Gyun, Lee, Sung Gi, Soul, Dae Soo, Kim, Tea Jin, Jeong, Yeon Ho, Jin, Geun Mo, Lee, Sung Chan
• Primary Examiner(s): YUSHINA, GALINA G
• Application Number:
  US15/563,273
• Publication Number:
  US 20180076362A1
• Time in Patent Office: 988 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices

Abstract

Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.

Claims

1. A semiconductor light emitting device comprising:

a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;

a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle;

a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of the second non-conductive reflective film made of a different material from the first non-conductive reflective film, and the second non-conductive reflective film has a second incident angle as the Brewster angle, the second incident angle different from the first incident angle; and

an electrode electrically connected to one of the plurality of semiconductor layers;

wherein the second non-conductive film has a higher reflectance at the Brewster angle of the first non-conductive reflective film than at other angles.

2. The semiconductor light emitting device according to claim 1, wherein the first non-conductive reflective film and the second non-conductive reflective film each comprise one of a DBR (Distributed Bragg Reflector) and an ODR (Omni-Directional Reflector).

3. The semiconductor light emitting device according to claim 1, wherein the multiple layers of the first non-conductive reflective film comprise a stack of alternating first material layer/second material layer pairs, and

the multiple layers of the second non-conductive reflective film comprise a stack of alternating third material layer/fourth material layer pairs, wherein at least one of the third material layer and the fourth material layer is made of a different material from the first material layer and the second material layer.

4. The semiconductor light emitting device according to claim 3, wherein the first and second material layers comprise different materials selected from SiO₂, TiO₂, Ta₂O₂, HfO, ZrO and SiN, and

the third and fourth material layers comprise different materials selected from TiO₂, Ta₂O₅, HfO, ZrO and SiN.

5. The semiconductor light emitting device according to claim 3, wherein the first material layer/second material layer pair comprises SiO₂/TiO₂ to form a first insulating reflective layer, and

the third material layer/fourth material layer pair comprises TiO₂/Ta₂O₅ to form a second insulating reflective layer.