System and method for forming a buried lower electrode in conjunction with an encapsulated MEMS device
First Claim
1. A method of forming a MEMS device comprising:
- defining a first electrode in a silicon portion of a first wafer;
positioning a second wafer on an upper surface of the first wafer;
forming a second electrode in a first layer of the second wafer, the first layer located above the upper surface of the first wafer;
forming a third electrode in a second layer of the second wafer, the second layer located above an upper surface of the first layer;
forming a first contact in electrical communication with the first electrode, the first contact extending through the second layer and the first layer;
forming a second contact in electrical communication with the second electrode, the second contact extending through the second layer and electrically isolated from the first contact within the second layer; and
defining a third contact in electrical communication with the third electrode, the third contact accessible from above the second layer.
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Accused Products
Abstract
A system and method for forming a sensor device with a buried first electrode includes providing a first silicon portion with an electrode layer and a second silicon portion with a device layer. The first silicon portion and the second silicon portion are adjoined along a common oxide layer formed on the electrode layer of the first silicon portion and the device layer of the second silicon portion. The resulting multi-silicon stack includes a buried lower electrode that is further defined by a buried oxide layer, a highly-doped ion implanted region, or a combination thereof. The multi-silicon stack has a plurality of silicon layers and silicon dioxide layers with electrically isolated regions in each layer allowing for both the lower electrode and an upper electrode. The multi-silicon stack further includes a spacer that enables the lower electrode to be accessible from a topside of the sensor device.
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Citations
18 Claims
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1. A method of forming a MEMS device comprising:
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defining a first electrode in a silicon portion of a first wafer; positioning a second wafer on an upper surface of the first wafer; forming a second electrode in a first layer of the second wafer, the first layer located above the upper surface of the first wafer; forming a third electrode in a second layer of the second wafer, the second layer located above an upper surface of the first layer; forming a first contact in electrical communication with the first electrode, the first contact extending through the second layer and the first layer; forming a second contact in electrical communication with the second electrode, the second contact extending through the second layer and electrically isolated from the first contact within the second layer; and defining a third contact in electrical communication with the third electrode, the third contact accessible from above the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 17)
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13. A MEMS device, comprising:
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a first electrode in a silicon portion of a first wafer; a second electrode in a first layer of a second wafer attached to the first wafer and located above an upper surface of the first wafer; a third electrode in a second layer of the second wafer and located above an upper surface of the first layer; a first contact in electrical communication with the first electrode, the first contact extending through the second layer and the first layer; a second contact in electrical communication with the second electrode, the second contact extending through the second layer and electrically isolated from the first contact within the second layer; and a third contact in electrical communication with the third electrode, the third contact accessible from above the second layer. - View Dependent Claims (14, 15, 16, 18)
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Specification