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Semiconductor structure for MEMS Device

  • US 10,160,639 B2
  • Filed: 06/27/2016
  • Issued: 12/25/2018
  • Est. Priority Date: 06/27/2016
  • Status: Active Grant
First Claim
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1. A structure for a microelectromechanical systems (MEMS) device, the structure comprising:

  • an interlayer dielectric (ILD) region positioned over a substrate;

    an inter-metal dielectric (IMD) region positioned over the ILD region, wherein the IMD region is comprised of a passivation layer overlying a stacked structure, wherein the stacked structure alternates between dielectric layers and etch stop layers, and wherein metal wire layers are disposed within the stacked structure of the IMD region;

    one or more electrode extension vias comprising a conductive material arranged within the IMD region and contacting an upper metal wire layer;

    an electrode layer having sensing electrodes and bonding electrodes that are positioned over the one or more electrode extension vias and that have lower surfaces directly contacting the passivation layer;

    a MEMS substrate comprising a MEMS device having a soft mechanical structure positioned directly over and vertically separated from a first sensing electrode of the sensing electrodes, wherein the MEMS substrate is bonded to the IMD region by a bonding structure; and

    wherein the bonding structure is electrically connected to the MEMS substrate and the bonding structure is further electrically connected to the metal wire layers of the IMD region by a second electrode extension via that extends through the passivation layer.

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