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Reduced stress pressure sensor

  • US 10,161,817 B2
  • Filed: 10/23/2014
  • Issued: 12/25/2018
  • Est. Priority Date: 11/06/2013
  • Status: Active Grant
First Claim
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1. A pressure sensor, comprising:

  • a first substrate containing layers for CMOS processing,a cap attached to a front side of the first substrate from its front side, wherein the cap includes a container, a holder, and two or more suspension elements to concentrically suspend the holder, wherein the two or more suspension elements are disposed on a back side of the cap for suspending the container from the holder, the container includes a cavity and a polysilicon layer, wherein the cavity is formed on a front side of the container and between the polysilicon layer of the container and a deformable membrane and wherein the cavity is closed by the deformable membrane, wherein the deformable membrane separates the cavity and a port that is positioned on the back side of the cap and is open to an outside of the pressure sensor, the container being suspended form the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port, and wherein the back side of the cap includes a recess formed on a back side of the container, and wherein a permeable protection membrane is disposed on the back side of the cap and covers the recess that is permeable to pressure medium, andsensing means for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.

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