Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a base substrate;
an insulating layer formed on the base substrate;
a first optical waveguide composed of a semiconductor layer formed on the insulating layer; and
a first insulating film formed along an upper surface of the insulating layer and an upper surface and side surfaces of the first optical waveguide,wherein a first peripheral edge portion of a first lower surface of the first optical waveguide is separated from the insulating layer,wherein a portion of the first lower surface that is inside the first peripheral edge portion contacts with the insulating layer,the insulating layer has a trench under the first peripheral edge portion, andthe first insulating film is buried in the trench.
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Abstract
A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.
17 Citations
20 Claims
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1. A semiconductor device comprising:
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a base substrate; an insulating layer formed on the base substrate; a first optical waveguide composed of a semiconductor layer formed on the insulating layer; and a first insulating film formed along an upper surface of the insulating layer and an upper surface and side surfaces of the first optical waveguide, wherein a first peripheral edge portion of a first lower surface of the first optical waveguide is separated from the insulating layer, wherein a portion of the first lower surface that is inside the first peripheral edge portion contacts with the insulating layer, the insulating layer has a trench under the first peripheral edge portion, and the first insulating film is buried in the trench. - View Dependent Claims (2, 3, 4, 5, 15, 16, 17, 18, 19)
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6. A method for manufacturing a semiconductor device comprising the steps of:
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(a) preparing a semiconductor substrate having a base substrate, an insulating layer formed on the base substrate, and a semiconductor layer formed on the insulating layer; (b) patterning the semiconductor layer to form a first optical waveguide composed of the semiconductor layer; and (c) forming a first insulating film along an upper surface of the insulating layer and a front surface of the first optical waveguide, wherein upon carrying out the step (b), a first gap is formed between a first peripheral edge portion of a first lower surface of the first optical waveguide and the insulating layer, and in step (c), the first gap is buried by the first insulating film. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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20. A semiconductor device comprising:
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an insulating layer formed on a substrate; an optical waveguide formed on the insulating layer and including a bottom surface that contacts with the insulating layer, a side of the optical waveguide being formed over a recess in an upper surface of the insulating layer such that a gap is formed between a bottom surface of the optical waveguide and the insulating layer; and a first insulating film formed along the upper surface of the insulating layer and on the optical waveguide, and being formed in the recess in the upper surface of the insulating layer so as to fill the gap between the bottom surface of the optical waveguide and the insulating layer.
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Specification