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Selective cobalt removal for bottom up gapfill

  • US 10,163,696 B2
  • Filed: 11/11/2016
  • Issued: 12/25/2018
  • Est. Priority Date: 11/11/2016
  • Status: Expired due to Fees
First Claim
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1. An etching method comprising:

  • flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber;

    forming a plasma of the chlorine-containing precursor to produce plasma effluents;

    contacting an exposed region of cobalt with the plasma effluents, wherein the exposed region of cobalt comprises an overhang of cobalt on a trench defined on a substrate, and wherein the plasma effluents produce cobalt chloride at the overhang of cobalt;

    flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber;

    contacting the cobalt chloride with the nitrogen-containing precursor;

    recessing the overhang of cobalt; and

    contacting the substrate with effluents of a hydrogen-containing plasma to remove residue from exposed cobalt surfaces.

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