Selective cobalt removal for bottom up gapfill
First Claim
1. An etching method comprising:
- flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber;
forming a plasma of the chlorine-containing precursor to produce plasma effluents;
contacting an exposed region of cobalt with the plasma effluents, wherein the exposed region of cobalt comprises an overhang of cobalt on a trench defined on a substrate, and wherein the plasma effluents produce cobalt chloride at the overhang of cobalt;
flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber;
contacting the cobalt chloride with the nitrogen-containing precursor;
recessing the overhang of cobalt; and
contacting the substrate with effluents of a hydrogen-containing plasma to remove residue from exposed cobalt surfaces.
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Accused Products
Abstract
Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.
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Citations
18 Claims
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1. An etching method comprising:
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flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber; forming a plasma of the chlorine-containing precursor to produce plasma effluents; contacting an exposed region of cobalt with the plasma effluents, wherein the exposed region of cobalt comprises an overhang of cobalt on a trench defined on a substrate, and wherein the plasma effluents produce cobalt chloride at the overhang of cobalt; flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber; contacting the cobalt chloride with the nitrogen-containing precursor; recessing the overhang of cobalt; and contacting the substrate with effluents of a hydrogen-containing plasma to remove residue from exposed cobalt surfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of producing a gap-free cobalt fill, the method comprising:
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depositing a first amount of cobalt into a trench defined on a substrate, wherein the deposition forms an overhang of cobalt at an opening of the trench; flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber, wherein the processing region houses the substrate; forming a plasma of the chlorine-containing precursor to produce plasma effluents; contacting the overhang of cobalt with the plasma effluents to produce cobalt chloride at the overhang of cobalt; flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber; contacting the cobalt chloride with the nitrogen-containing precursor; recessing the overhang of cobalt; and contacting the substrate with effluents of a hydrogen-containing plasma to remove residue from exposed cobalt surfaces. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification