Method and structure for FinFet isolation
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate;
first and second fins over the substrate and extending lengthwise generally along a first direction;
a first gate stack over the substrate and the first fin;
a second gate stack over the substrate and the second fin; and
a first isolation structure disposed between the first and second fins and extending lengthwise generally along a second direction perpendicular to the first direction, wherein the first isolation structure is adjacent to a first source/drain (S/D) region in the first fin and adjacent to a second S/D region in the second fin.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a substrate; first and second fins over the substrate and extending lengthwise generally along a first direction; first and second gate stacks over the substrate and the first and second fins respectively; and a first isolation structure disposed between the first and second fins and extending lengthwise generally along a second direction perpendicular to the first direction, wherein the first isolation structure is adjacent to a first source/drain (S/D) region in the first fin and adjacent to a second S/D region in the second fin.
-
Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a substrate; first and second fins over the substrate and extending lengthwise generally along a first direction; a first gate stack over the substrate and the first fin; a second gate stack over the substrate and the second fin; and a first isolation structure disposed between the first and second fins and extending lengthwise generally along a second direction perpendicular to the first direction, wherein the first isolation structure is adjacent to a first source/drain (S/D) region in the first fin and adjacent to a second S/D region in the second fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device, comprising:
-
a substrate; first and second fins over the substrate and extending lengthwise generally along a same direction; a first isolation structure over the substrate, wherein the first and second fins protrude above a top surface of the first isolation structure; first and second gate stacks over the top surface of the first isolation structure and engaging the first and second fins respectively; a second isolation structure disposed between the first and second fins and in physical contact with the first and second fins; and spacer features on sidewalls of an upper portion of the second isolation structure. - View Dependent Claims (10, 11, 12, 13, 14)
-
-
15. A semiconductor device, comprising:
-
a substrate; first and second fins over the substrate and extending lengthwise generally along a same direction; a first gate stack over the substrate and engaging the first fin; a second gate stack over the substrate and engaging the second fin; a first isolation structure over and physically contacting a first end of the first fin; a second isolation structure over and physically contacting a first end of the second fin; and a third isolation structure between the first and second fins and in physical contact with a second end of the first fin and a second end of the second fin. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification