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Multi-chip package and method of formation

  • US 10,163,841 B2
  • Filed: 12/05/2014
  • Issued: 12/25/2018
  • Est. Priority Date: 08/01/2013
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a first semiconductor die embedded in a molding compound layer;

    a surface-mount device embedded in the molding compound layer, wherein the surface-mount device comprises a first conductive contact and a second conductive contact;

    a plurality of interconnect structures formed on the molding compound layer, wherein;

    the first semiconductor die is electrically coupled to the interconnect structures and the interconnect structures are in contact with a first side of the first semiconductor die; and

    the surface-mount device is electrically coupled to the interconnect structures through a first metal pillar on the first conductive contact and a second metal pillar on the second conductive contact, and wherein a surface of the first metal pillar is level with a surface of the molding compound layer, and wherein the first metal pillar is formed of a single conductive material extending from a first side of the surface-mount device to a surface of the molding compound layer, and wherein a surface of a second side of the surface-mount device is substantially level with a surface of a second side of the first semiconductor die, and wherein a portion of the molding compound layer is between the first metal pillar and the second metal pillar, and wherein the molding compound layer does not extend over the first side of the first semiconductor die; and

    a plurality of bumps formed on and electrically coupled to the plurality of interconnect structures.

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