Imaging device and electronic device

• US 10,163,948 B2
• Filed: 07/15/2016
• Issued: 12/25/2018
• Est. Priority Date: 07/23/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohmaru, Takuro
• Primary Examiner(s): Kim, Jay C
• Application Number:
  US15/211,113
• Publication Number:
  US 20170025456A1
• Time in Patent Office: 893 Days
• Field of Search: 257 43
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/14607 Geometry of the photosensitive area
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 31/0272 Selenium or tellurium
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 25/772 comprising A/D, V/T, V/F, I/T or I/F converters

Abstract

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device can correct variation in the threshold voltage of amplifier transistors included in pixel circuits. The amplifier transistor includes two gates facing each other with a channel formation region provided therebetween. The amplifier transistor operates in such a manner that one of the gates holds a potential for correcting variation in the threshold voltage and the other thereof is supplied with a potential corresponding to imaging data.

Claims

1. An imaging device comprising:

a photoelectric conversion element;

first to seventh transistors; and

first and second capacitors,

wherein the fourth transistor comprises a first gate and a second gate,

wherein the second gate faces the first gate with a channel formation region therebetween,

wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and one terminal of the first capacitor,

wherein the other terminal of the first capacitor is electrically connected to one of a source and a drain of the third transistor and the first gate of the fourth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the seventh transistor and one terminal of the second capacitor, and

wherein the other of the source and the drain of the sixth transistor is electrically connected to the other terminal of the second capacitor and the second gate of the fourth transistor.

2. The imaging device according to claim 1 further comprising a third capacitor,

wherein one terminal of the third capacitor is electrically connected to the other terminal of the first capacitor.

3. The imaging device according to claim 2 further comprising a fourth capacitor,

wherein one terminal of the fourth capacitor is electrically connected to the other terminal of the second capacitor.

4. The imaging device according to claim 1,

wherein each of the first to seventh transistors comprises an oxide semiconductor in an active layer,

wherein the oxide semiconductor comprises In, Zn, and M, and

wherein M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

5. The imaging device according to claim 1,

wherein the photoelectric conversion element comprises selenium or a compound comprising selenium in a photoelectric conversion layer.

6. A module comprising:

the imaging device according to claim 1; and

a lens.

7. An electronic device comprising:

the imaging device according to claim 1; and

a display device.

8. An imaging device comprising:

a photoelectric conversion element;

first to eighth transistors; and

first and second capacitors,

wherein the fourth transistor comprises a first gate and a second gate,

wherein the second gate faces the first gate with a channel formation region therebetween,

wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,

wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and one terminal of the first capacitor,

wherein the other terminal of the first capacitor is electrically connected to one of a source and a drain of the third transistor and the first gate of the fourth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the seventh transistor and one terminal of the second capacitor,

wherein the other of the source and the drain of the sixth transistor is electrically connected to the other terminal of the second capacitor and the second gate of the fourth transistor, and

wherein the other of the source and the drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor.

9. The imaging device according to claim 8 further comprising a third capacitor,

wherein one terminal of the third capacitor is electrically connected to the other terminal of the first capacitor.

10. The imaging device according to claim 9 further comprising a fourth capacitor,

wherein one terminal of the fourth capacitor is electrically connected to the other terminal of the second capacitor.

11. The imaging device according to claim 8,

wherein each of the first to eighth transistors comprises an oxide semiconductor in an active layer,

wherein the oxide semiconductor comprises In, Zn, and M, and

wherein M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

12. The imaging device according to claim 8,

wherein the photoelectric conversion element comprises selenium or a compound comprising selenium in a photoelectric conversion layer.

13. A module comprising:

the imaging device according to claim 8; and

a lens.

14. An electronic device comprising:

the imaging device according to claim 8; and

a display device.