Pixel having an organic light emitting diode and method of fabricating the pixel
First Claim
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1. A pixel having a vertical architecture, comprising:
- an organic light emitting diode (OLED) device having a bottom electrode, one or more OLED layers and a transparent top electrode for emitting light;
a thin-film transistor (TFT) based backplane for electrically driving the OLED device, the TFT based backplane being vertically integrated with the OLED layers and located below said bottom electrode to form a top-emitting OLED, the TFT based backplane comprising;
source and drain nodes; and
a thin conductive contact plate formed entirely on a flat portion of the pixel area and electrically coupled to a source or drain node, the thin conductive contact plate defined by a top surface, a bottom surface, and side surfaces, its vertical dimension defined by the top and bottom surfaces substantially smaller than its horizontal dimensions defined by the side surfaces;
a planarization dielectric layer provided between the TFT based backplane and the OLED bottom electrode so as to planarize the vertical profile on the TFT based backplane, said planarization dielectric layer being in direct contact with both said TFT based backplane and said OLED bottom electrode;
a via in said planarization dielectric layer to provide a communication path between said TFT based backplane and said OLED device and through said thin conductive contact plate; and
a dielectric layer deposited on top of said bottom electrode and covering said via and all the edges of said bottom electrode while leaving the rest of said bottom electrode uncovered.
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Abstract
A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
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Citations
21 Claims
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1. A pixel having a vertical architecture, comprising:
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an organic light emitting diode (OLED) device having a bottom electrode, one or more OLED layers and a transparent top electrode for emitting light; a thin-film transistor (TFT) based backplane for electrically driving the OLED device, the TFT based backplane being vertically integrated with the OLED layers and located below said bottom electrode to form a top-emitting OLED, the TFT based backplane comprising; source and drain nodes; and a thin conductive contact plate formed entirely on a flat portion of the pixel area and electrically coupled to a source or drain node, the thin conductive contact plate defined by a top surface, a bottom surface, and side surfaces, its vertical dimension defined by the top and bottom surfaces substantially smaller than its horizontal dimensions defined by the side surfaces; a planarization dielectric layer provided between the TFT based backplane and the OLED bottom electrode so as to planarize the vertical profile on the TFT based backplane, said planarization dielectric layer being in direct contact with both said TFT based backplane and said OLED bottom electrode; a via in said planarization dielectric layer to provide a communication path between said TFT based backplane and said OLED device and through said thin conductive contact plate; and a dielectric layer deposited on top of said bottom electrode and covering said via and all the edges of said bottom electrode while leaving the rest of said bottom electrode uncovered. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a pixel, the pixel having an organic light emitting diode (OLED) bottom electrode, one or more OLED layers on the OLED bottom electrode, a transparent top electrode, and a thin-film transistor (TFT) based backplane for electrically driving the OLED and including a substrate, the method comprising the steps of:
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providing the TFT based backplane on said substrate, including forming within the TFT based backplane a thin conductive contact plate entirely on a flat portion of the pixel area and electrically coupled to a source or drain node of the TFT based backplane, the thin conductive contact plate defined by a top surface, a bottom surface, and side surfaces, its vertical dimension defined by the top and bottom surfaces substantially smaller than its horizontal dimensions defined by the side surfaces; providing a dielectric layer on the TFT based backplane, including the step of planarizing a vertical profile in the dielectric layer so as to planarize the vertical profile on the substrate with the TFT based backplane, said planarized dielectric layer being in direct contact with said TFT based backplane; forming a via in said planarization dielectric layer to provide a communication path between said TFT based backplane and said OLED device and through said thin conductive contact plate; depositing said OLED bottom electrode directly on top of said planarized dielectric layer and extending through said via into direct contact with said thin conductive contact plate of said TFT based backplane; and depositing a dielectric layer on top of said bottom electrode and covering said via and all the edges of said bottom electrode while leaving the rest of said bottom electrode uncovered. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method of fabricating a pixel, the pixel having an organic light emitting diode (OLED) bottom electrode, one or more OLED layers on the OLED bottom electrode, and a thin-film transistor (TFT) based backplane for electrically driving the OLED and including a substrate, the method comprising the steps of:
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providing the TFT based backplane on said substrate, including forming within the TFT based backplane a thin conductive contact plate entirely on a flat portion of the pixel area and electrically coupled to a source or drain node of the TFT based backplane, the thin conductive contact plate defined by a top surface, a bottom surface, and side surfaces, its vertical dimension defined by the top and bottom surfaces substantially smaller than its horizontal dimensions defined by the side surfaces; providing a dielectric layer on the TFT based backplane, including the step of planarizing a vertical profile in the dielectric layer so as to planarize the vertical profile on the substrate with the TFT based backplane, said planarized dielectric layer being in direct contact with said TFT based backplane; forming a via in said planarization dielectric layer to provide a communication path between said TFT based backplane and said OLED device and through said thin conductive contact plate; depositing said OLED bottom electrode directly on top of said planarized dielectric layer and extending through said via into direct contact with said thin conductive contact plate of said TFT based backplane, and depositing a dielectric layer on top of said bottom electrode and covering said via and all the edges of said bottom electrode while leaving the rest of said bottom electrode uncovered.
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Specification