Semiconductor device having termination trench
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region;
a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and
an edge termination trench within the edge termination region, the edge termination trench surrounding the cell region at the surface of the semiconductor substrate structure;
wherein a bottom of the edge termination trench extends deeper into the semiconductor substrate structure than a bottom of each of the needle-shaped cell trenches, andwherein the semiconductor substrate structure comprises a doping concentration that increases with distance from the surface of the semiconductor substrate structure and has a higher doping concentration at a depth of the bottom of the edge termination trench than a doping concentration at a depth of the bottom of each of the needle-shaped cell trenches.
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Abstract
A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and an edge termination trench within the edge termination region, the edge termination trench surrounding the cell region at the surface of the semiconductor substrate structure; wherein a bottom of the edge termination trench extends deeper into the semiconductor substrate structure than a bottom of each of the needle-shaped cell trenches, and wherein the semiconductor substrate structure comprises a doping concentration that increases with distance from the surface of the semiconductor substrate structure and has a higher doping concentration at a depth of the bottom of the edge termination trench than a doping concentration at a depth of the bottom of each of the needle-shaped cell trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; at least one cell trench within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; at least one edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure; and an insulation layer within the at least one cell trench and within the at least one edge termination trench, wherein; the insulation layer within the at least one cell trench is thinner than the insulation layer within the at least one edge termination trench; and the semiconductor substrate structure comprises a doping concentration that increases with distance from the surface of the semiconductor substrate structure and has a higher doping concentration at a depth of a bottom of one of the at least one edge termination trench than a doping concentration at a depth of the bottom of each of the at least one cell trench. - View Dependent Claims (15)
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Specification