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Semiconductor device having termination trench

  • US 10,164,025 B2
  • Filed: 01/11/2018
  • Issued: 12/25/2018
  • Est. Priority Date: 08/28/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region;

    a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and

    an edge termination trench within the edge termination region, the edge termination trench surrounding the cell region at the surface of the semiconductor substrate structure;

    wherein a bottom of the edge termination trench extends deeper into the semiconductor substrate structure than a bottom of each of the needle-shaped cell trenches, andwherein the semiconductor substrate structure comprises a doping concentration that increases with distance from the surface of the semiconductor substrate structure and has a higher doping concentration at a depth of the bottom of the edge termination trench than a doping concentration at a depth of the bottom of each of the needle-shaped cell trenches.

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