Bipolar semiconductor device with multi-trench enhancement regions

• US 10,164,078 B2
• Filed: 03/18/2016
• Issued: 12/25/2018
• Est. Priority Date: 03/18/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Udrea, Florin, Camuso, Gianluca, Hsieh, Alice Pei-Shan, Ng, Chiu, Tang, Yi, Vytla, Rajeev Krishna, Li, Canhua
• Primary Examiner(s): Payen, Marvin
• Assistant Examiner(s): Joy, Jeremy
• Application Number:
  US15/074,062
• Publication Number:
  US 20170271488A1
• Time in Patent Office: 1,012 Days
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0804 Emitter regions of bipolar transistors
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

There are disclosed herein various implementations of a bipolar semiconductor device with multi-trench enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having an opposite, second conductivity type. The device also includes a first control trench extending through an inversion region having the second conductivity type, and further extending into the drift region, the first control trench being adjacent to cathode diffusions. In addition, the device includes first and second depletion trenches, each having a depletion electrode, the first depletion trench being situated between the second depletion trench and the first control trench. An enhancement region having the first conductivity type is localized in the drift region and extends from the first control trench to the first second depletion trench and further from the first depletion trench to the second depletion trench.

Claims

1. A bipolar semiconductor device comprising a plurality of unit cells, each of said plurality of unit cells comprising:

a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite said first conductivity type;

a first control trench extending through an inversion region having said second conductivity type, and further extending into said drift region, said first control trench adjacent to cathode diffusions;

first and second depletion trenches, each having a depletion electrode;

said first depletion trench being situated between said second depletion trench and said first control trench;

an enhancement region having said first conductivity type localized in said drift region and extending from said first control trench to said first depletion trench and further from said first depletion trench to said second depletion trench; and

a second control trench adjacent to said first control trench, said enhancement region not extending between said first control trench and said second control trench.

2. The bipolar semiconductor device of claim 1, wherein a doping concentration of said enhancement region is greater than a doping concentration of said drift region.

3. The bipolar semiconductor device of claim 1, wherein a doping concentration of said enhancement region is less than a doping concentration of said cathode diffusions.

4. The bipolar semiconductor device of claim 1, wherein said depletion electrodes are electrically coupled to said cathode diffusions.

5. The bipolar semiconductor device of claim 1, wherein each of said plurality of unit cells further comprises a buffer layer having said first conductivity type situated between said anode layer and said drift region.

6. The bipolar semiconductor device of claim 1, wherein said first conductivity is N type and said second conductivity is P type.

7. The bipolar semiconductor device of claim 1, wherein each of said plurality of unit cells further comprises a third depletion trench adjacent to said first and second depletion trenches, said enhancement region further extending from said second depletion trench to said third depletion trench.

8. The bipolar semiconductor device of claim 1, wherein each of said plurality of unit cells further comprises a third control trench adjacent to said second control trench, said enhancement region not extending between said second control trench and said third control trench.

9. The bipolar semiconductor device of claim 8, wherein each of said plurality of unit cells further comprises a third depletion trench adjacent to said first and second depletion trenches, said enhancement region further extending from said second depletion trench to said third depletion trench.

10. An insulated-gate bipolar transistor (IGBT) comprising a plurality of IGBT unit cells, each of said plurality of IGBT unit cells comprising:

a drift region having a first conductivity type situated over a collector having a second conductivity type opposite said first conductivity type;

a first gate trench extending through an inversion region having said second conductivity type, and further extending into said drift region, said first gate trench adjacent to emitter diffusions;

first and second depletion trenches, each having a depletion electrode;

said first depletion trench being situated between said second depletion trench and said first gate trench;

an enhancement region having said first conductivity type localized in said drift region and extending from said first gate trench to said first depletion trench and further from said first depletion trench to said second depletion trench; and

a second gate trench adjacent to said first gate trench, said enhancement region not extending between said first gate trench and said second gate trench.

11. The IGBT of claim 10, wherein a doping concentration of said enhancement region is greater than a doping concentration of said drift region.

12. The IGBT of claim 10, wherein a doping concentration of said enhancement region is less than a doping concentration of said emitter diffusions.

13. The IGBT of claim 10, wherein said depletion electrodes are electrically coupled to said emitter diffusions.

14. The IGBT of claim 10, wherein each of said plurality of IGBT unit cells further comprises a buffer layer having said first conductivity type situated between said collector and said drift region.

15. The IGBT of claim 10, wherein said first conductivity is N type and said second conductivity is P type.

16. The IGBT of claim 10, wherein each of said plurality of IGBT unit cells further comprises a third depletion trench adjacent to said first and second depletion trenches, said enhancement region further extending from said second depletion trench to said third depletion trench.

17. The IGBT of claim 10, wherein each of said plurality of IGBT unit cells further comprises a third gate trench adjacent to said second gate trench, said enhancement region not extending between said second gate trench and said third gate trench.

18. The IGBT of claim 17, wherein each of said plurality of IGBT unit cells further comprises a third depletion trench adjacent to said first and second depletion trenches, said enhancement region further extending from said second depletion trench to said third depletion trench.