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Non-uniform superlattice structure

  • US 10,164,147 B2
  • Filed: 07/28/2017
  • Issued: 12/25/2018
  • Est. Priority Date: 04/16/2012
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a semiconductor structure including a superlattice, wherein the superlattice includes;

    a plurality of first semiconductor layers alternating with a plurality of second semiconductor layers, wherein at least one of;

    a first semiconductor layer in the plurality of first semiconductor layers or a second semiconductor layer in the plurality of second semiconductor layers includes a plurality of regions including;

    a fine structure region located only in an outer portion of the at least one of;

    the first semiconductor layer or the second semiconductor layer, wherein the fine structure region includes a plurality of subscale features arranged in a growth direction, wherein the plurality of subscale features includes a plurality of subscale layers of a first band gap and a plurality of subscale layers of a second band gap, wherein the subscale layers of the first band gap alternate with the subscale layers of the second band gap, and wherein one of the subscale layers of the first band gap and the subscale layers of the second band gap include subscale layers of a plurality of distinct heights differing from each other.

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