Semiconductor light emitting device with light extraction structures
First Claim
1. A light emitting device comprising:
- a substrate;
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region and having a first surface adjacent the substrate and a second surface opposite the first surface, the first surface having a plurality of cavities formed therein and extending into at least one of the n-type region and the p-type region, the plurality of cavities being spaced apart and lined by a dielectric layer, at least a portion of the second surface is roughened to form a plurality of features spaced apart at a distance smaller than a distance between each of the plurality of cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer; and
at least one contact disposed between the first surface of the semiconductor structure and the substrate.
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Accused Products
Abstract
A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.
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Citations
10 Claims
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1. A light emitting device comprising:
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a substrate; a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region and having a first surface adjacent the substrate and a second surface opposite the first surface, the first surface having a plurality of cavities formed therein and extending into at least one of the n-type region and the p-type region, the plurality of cavities being spaced apart and lined by a dielectric layer, at least a portion of the second surface is roughened to form a plurality of features spaced apart at a distance smaller than a distance between each of the plurality of cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer; and at least one contact disposed between the first surface of the semiconductor structure and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification