Achieving power supply and heat dissipation (cooling) in three-dimensional multilayer package
First Claim
1. A computer-implemented method for designing a package for a stacked multiple-chip Integrated Circuit (IC) structure, the method comprising the steps of:
- establishing, using the computer, a silicon (Si)-containing substrate having a wiring layer that optimizes power supply and heat dissipation for the stacked multiple-chip structure from an upper surface side of said stacked multiple-chip structure, said wiring layer supplying power to said stacked multiple-chip structure via a power supply;
setting, using the computer, a heat conductive thermal via density initial value for a chip of said stacked multiple-chip structure, wherein thermal via structures of said chip at said initial value density provide a heat dissipation route in the stacked multi-chip structure;
preparing the Si-containing substrate where said wiring layer is of a predetermined thickness and is formed on a bottom surface side of said Si-containing substrate contacting said upper surface side of said stacked multiple-chip structure and, prior to setting up an initial value of the power supply, connecting a heat dissipater a top an upper surface side of said Si-containing substrate for dissipating heat directly above the upper surface side of said Si-containing substrate;
setting, using the computer, the initial value of the power supply for said stacked multiple-chip structure supplied from said wiring layer of said Si-containing substrate;
determining, using the computer, whether the initial value of the power supply and the initial value of the thermal via density are both within a predetermined range; and
based on said determining, performing, using the computer, one or more of;
increasing or decreasing said initial value of the power supply until detecting a convergence of the initial power supply value within the predetermined range; and
increasing or decreasing said heat conductive thermal via density initial value until detecting a convergence of the thermal via density initial value within the predetermined range, andfabricating a three-dimensional multilayer chip package including said stacked multiple-chip structure having a thermal via density corresponding to the thermal via density value at the detected convergence, said three-dimensional multilayer chip package for receiving a power supply input at a value corresponding to the power supply value at the detected convergence.
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Accused Products
Abstract
A computer-implemented structure for optimizing a route for power supply and heat dissipation in a multilayer chip. The method includes: setting a heat conductive thermal value for the multilayer chip by way of density, preparing a substrate that contains silicon where a wiring layer is formed facing the upper surface side of the multilayer chip, setting the power from the wiring layer of the substrate that uses silicon, manipulating the value of the power supply, and manipulating the heat conductive thermal value based on density. Both apparatus'"'"'s include an organic substrate, a multilayer chip, a substrate containing silicon, a wiring layer, and a heat dissipater, wherein the components are configured to perform the steps of the above method. The method of configuring an apparatus ensures that all the multilayer chips are stored in the concave part of the organic substrate.
44 Citations
4 Claims
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1. A computer-implemented method for designing a package for a stacked multiple-chip Integrated Circuit (IC) structure, the method comprising the steps of:
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establishing, using the computer, a silicon (Si)-containing substrate having a wiring layer that optimizes power supply and heat dissipation for the stacked multiple-chip structure from an upper surface side of said stacked multiple-chip structure, said wiring layer supplying power to said stacked multiple-chip structure via a power supply; setting, using the computer, a heat conductive thermal via density initial value for a chip of said stacked multiple-chip structure, wherein thermal via structures of said chip at said initial value density provide a heat dissipation route in the stacked multi-chip structure; preparing the Si-containing substrate where said wiring layer is of a predetermined thickness and is formed on a bottom surface side of said Si-containing substrate contacting said upper surface side of said stacked multiple-chip structure and, prior to setting up an initial value of the power supply, connecting a heat dissipater a top an upper surface side of said Si-containing substrate for dissipating heat directly above the upper surface side of said Si-containing substrate; setting, using the computer, the initial value of the power supply for said stacked multiple-chip structure supplied from said wiring layer of said Si-containing substrate; determining, using the computer, whether the initial value of the power supply and the initial value of the thermal via density are both within a predetermined range; and
based on said determining, performing, using the computer, one or more of;increasing or decreasing said initial value of the power supply until detecting a convergence of the initial power supply value within the predetermined range; and increasing or decreasing said heat conductive thermal via density initial value until detecting a convergence of the thermal via density initial value within the predetermined range, and fabricating a three-dimensional multilayer chip package including said stacked multiple-chip structure having a thermal via density corresponding to the thermal via density value at the detected convergence, said three-dimensional multilayer chip package for receiving a power supply input at a value corresponding to the power supply value at the detected convergence. - View Dependent Claims (2, 3, 4)
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Specification