Data storage device and operating method for data storage device

• US 10,170,179 B2
• Filed: 01/03/2018
• Issued: 01/01/2019
• Est. Priority Date: 03/28/2017
• Status: Active Grant

• Current Assignee: Silicon Motion Incorporated California (Silicon Motion)
• Original Assignee: Silicon Motion Incorporated California (Silicon Motion)
• Inventors: Chiu, Shen-Ting
• Primary Examiner(s): Bradley, Matthew
• Assistant Examiner(s): Goldschmidt, Craig S
• Application Number:
  US15/861,018
• Publication Number:
  US 20180286477A1
• Time in Patent Office: 363 Days
• Field of Search: None
• CPC Class Codes: G06F 3/061 Improving I/O performance
• CPC Class Codes: G06F 3/064 Management of blocks
• CPC Class Codes: G06F 3/0655 Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits

Abstract

A data storage device with optimized write operations is provided. A data storage device uses a flash memory having K dies. Each die has N planes. Each plane has multiple blocks. Each block has multiple pages. Within one block, each word line is shared by M pages. K, N and M are integers larger than 1. The controller of the data storage device writes first L pages of data that a host issues in order into L pages of a first die. L is M*N. The L pages of the first die are provided by N planes of the first die with each plane of the first die using one block to provide M pages sharing the same word line. The first L pages of data are written to the N planes of the first die in an interleaved way.

Claims

1. A data storage device, comprising:

a flash memory, including K dies, wherein each die contains N planes, each plane contains a plurality of blocks, each block contains a plurality of pages, each word line is shared by M pages within the same block, and each of K, N and M is an integer greater than 1; and

a controller, writing a first patch of data that contains L pages issued by a host to L pages of a first die of the K dies, wherein L is a product of N and M, the L pages of the first die are provided by N planes of the first die with each plane of the first die using one block to provide M pages sharing the same word line, and the L pages contained in the first patch of data are written to the N planes of the first die in an interleaved way.

2. The data storage device as claimed in claim 1, wherein:

the controller writes a second patch of data that contains L pages to L pages of a second die of the K dies, wherein the second patch of data is issued by the host after the first patch of data; and

the L pages of the second die are provided by N planes of the second die with each plane of the second die using one block to provide M pages sharing the same word line, and the L pages contained in the second patch of data are written to the N planes of the second die in an interleaved way.

3. The data storage device as claimed in claim 2, wherein:

the controller writes (K−

2) patches of data sequentially issued by the host to (K−

2) dies of the K dies, wherein the (K−

2) patches of data include a third to a K_th patch of data and are sequentially issued by the host after the second patch of data, the (K−

2) dies include a third to a K_th die, each patch of the third to K_th patches of data contains L pages, and the third to K_th patches of data are stored to the third to K_th dies, respectively; and

in any die between the third to K_th dies, L pages contained in the corresponding patch of data are written to N planes in an interleaved way, and each plane uses one block to provide M pages sharing the same word line to store M pages of data.

4. The data storage device as claimed in claim 3, wherein:

the controller writes a (K+1)_th patch of data that contains L pages to another L pages of the first die, wherein the (K+1)_th patch of data is issued by the host after the K_th patch of data.

5. The data storage device as claimed in claim 1, wherein:

the controller writes L pages scattered in N blocks in different planes of one die in one shot with each block providing M pages sharing the same word line.

6. The data storage device as claimed in claim 1, wherein:

the flash memory provides multiple level cells to store data and each word line is shared by two pages within the same block.

7. The data storage device as claimed in claim 6, wherein:

N, the number of planes within each die, is 2; and

K, the number of dies, is 4.

8. The data storage device as claimed in claim 1, wherein:

the flash memory provides triple level cells to store data and each word line is shared by three pages within the same block.

9. The data storage device as claimed in claim 8, wherein:

N, the number of the planes within each die, is 2; and

K, the number of dies, is 4.

10. The data storage device as claimed in claim 1, wherein:

the controller writes each die in a z-shaped manner or a serrated-shaped manner.

11. A method for operating a data storage device, comprising:

writing a first patch of data that contains L pages issued by a host to L pages of a first die of K dies of a flash memory, wherein each die contains N planes, each plane contains a plurality of blocks, each block contains a plurality of pages, each word line is shared by M pages within the same block, and each of K, N and M is an integer greater than 1; and

setting L, a number, to be a product of N and M,

wherein;

the L pages of the first die are provided by N planes of the first die with each plane of the first die using one block to provide M pages sharing the same word line; and

the L pages contained in the first patch of data are written to the N planes of the first die in an interleaved way.

12. The method as claimed in claim 11, further comprising:

writing a second patch of data that contains L pages to L pages of a second die of the K dies, wherein the second patch of data is issued by the host after the first patch of data,

wherein;

the L pages of the second die are provided by N planes of the second die with each plane of the second die using one block to provide M pages sharing the same word line; and

the L pages contained in the second patch of data are written to the N planes of the second die in an interleaved way.

13. The method as claimed in claim 12, further comprising:

writing (K−

2) patches of data sequentially issued by the host to (K−

2) dies of the K dies, wherein the (K−

2) patches of data include a third to a K_th patch of data and are sequentially issued by the host after the second patch of data, the (K−

2) dies include a third to a K_th die, each patch of the third to K_th patches of data contains L pages, and the third to K_th patches of data are stored to the third to K_th dies, respectively,

wherein;

in any die between the third to K_th dies, L pages contained in the corresponding patch of data are written to N planes in an interleaved way, and each plane uses one block to provide M pages sharing the same word line to store M pages of data.

14. The method as claimed in claim 13, further comprising:

writing a (K+1)_th patch of data that contains L pages to another L pages of the first die, wherein the (K+1)_th patch of data is issued by the host after the K_th patch of data.

15. The method as claimed in claim 11, further comprising:

writing L pages scattered in N blocks in different planes of one die in one shot with each block providing M pages sharing the same word line.

16. The method as claimed in claim 11, wherein:

the flash memory provides multiple level cells to store data and each word line is shared by two pages within the same block.

17. The method as claimed in claim 16, wherein:

N, the number of planes within each die, is 2; and

K, the number of dies, is 4.

18. The method as claimed in claim 11, wherein:

the flash memory provides triple level cells to store data and each word line is shared by three pages within the same block.

19. The method as claimed in claim 18, wherein:

N, the number of planes within each die, is 2; and

K, the number of dies, is 4.

20. The method as claimed in claim 11, wherein:

the controller writes each die in a z-shaped manner or a serrated-shaped manner.