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Low temperature fabrication of lateral thin film varistor

  • US 10,170,224 B2
  • Filed: 11/22/2017
  • Issued: 01/01/2019
  • Est. Priority Date: 02/26/2015
  • Status: Active Grant
First Claim
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1. A lateral thin film varistor device, comprising:

  • a substrate;

    a dielectric layer on the substrate;

    two electrodes on the dielectric layer and spaced apart from each other in a first, lateral direction; and

    a continuous, varistor layer on the dielectric layer and located between, and in contact with, the two electrodes, and comprising regions of a first metal oxide layer, and regions of a second metal oxide layer, and wherein;

    the regions of the first metal oxide layer alternate with the regions of the second metal oxide layer in the lateral direction between the two electrodes,the regions of the second metal oxide layer project outside the regions of the first metal oxide layer in a second, transverse direction perpendicular to the lateral direction, andtwo of the regions of the first metal oxide layer are located laterally outside the regions of the second metal oxide layer, in contact with the two electrodes.

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