Stress memorization technique for strain coupling enhancement in bulk finFET device
First Claim
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1. A method for forming strained fins, comprising:
- forming a staircase fin structure in a substrate with narrow top portions for fins;
epitaxially growing raised source and drain regions over the fins; and
performing a pre-amorphization implant to generate defects in the substrate to induce strain and to couple the strain into the top portions of the fins.
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Abstract
A method for forming strained fins includes etching trenches in a bulk substrate to form fins, filling the trenches with a dielectric fill and recessing the dielectric fill into the trenches to form shallow trench isolation regions. The fins are etched above the shallow trench isolation regions to form a staircase fin structure with narrow top portions of the fins. Gate structures are formed over the top portions of the fins. Raised source ad drain regions are epitaxially grown on opposite sides of the gate structure. A pre-morphization implant is performed to generate defects in the substrate to couple strain into the top portions of the fins.
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Citations
10 Claims
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1. A method for forming strained fins, comprising:
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forming a staircase fin structure in a substrate with narrow top portions for fins; epitaxially growing raised source and drain regions over the fins; and performing a pre-amorphization implant to generate defects in the substrate to induce strain and to couple the strain into the top portions of the fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification