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Stress memorization technique for strain coupling enhancement in bulk finFET device

  • US 10,170,364 B2
  • Filed: 12/13/2017
  • Issued: 01/01/2019
  • Est. Priority Date: 09/18/2015
  • Status: Active Grant
First Claim
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1. A method for forming strained fins, comprising:

  • forming a staircase fin structure in a substrate with narrow top portions for fins;

    epitaxially growing raised source and drain regions over the fins; and

    performing a pre-amorphization implant to generate defects in the substrate to induce strain and to couple the strain into the top portions of the fins.

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