Semiconductor device and a manufacturing method of the semiconductor device
First Claim
1. A semiconductor device comprising:
- a first semiconductor module housing a first semiconductor element and a third semiconductor element;
a second semiconductor module housing a second semiconductor element and a fourth semiconductor element, the second semiconductor element having a switching voltage threshold that is lower than a switching voltage threshold of the first semiconductor element of the first semiconductor module, and the fourth semiconductor element having a switching voltage threshold that is higher than a switching voltage threshold of the third semiconductor element of the first semiconductor module; and
a first busbar that connects an external terminal of the first semiconductor element of the first semiconductor module to an external terminal of the second semiconductor element of the second semiconductor module in parallel to a first common terminal; and
a second busbar that connects an external terminal of the third semiconductor element of the first semiconductor module to an external terminal of the fourth semiconductor element of the second semiconductor module in parallel to a second common terminal, whereinan inductance of a current path from the first common terminal to the first semiconductor element in the first semiconductor module is lower than an inductance of a current path from the first common terminal to the second semiconductor element in the second semiconductor module, andan inductance of a current path from the second common terminal to the third semiconductor element of the first semiconductor module is higher than an inductance of a current path from the second common terminal to the fourth semiconductor element of the second semiconductor module.
1 Assignment
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Accused Products
Abstract
A semiconductor device including a semiconductor module 10A, a semiconductor module 10B that has a lower switching voltage threshold than the semiconductor module 10A, and busbars 331 and 32 that connect the semiconductor module 10A and the semiconductor module 10B in parallel to a common terminal. The semiconductor module 10B is connected at a connection point on the busbar 32 at which the inductance relative to the common terminal is higher than that of the semiconductor module 10A. The semiconductor module 10B with the low threshold voltage is turned ON faster than the semiconductor module 10A with the high threshold voltage for input of a common switching voltage, but can restrict the rising of the current due to the high inductance of the busbar 32, thereby enabling restriction of the current imbalance.
8 Citations
17 Claims
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1. A semiconductor device comprising:
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a first semiconductor module housing a first semiconductor element and a third semiconductor element; a second semiconductor module housing a second semiconductor element and a fourth semiconductor element, the second semiconductor element having a switching voltage threshold that is lower than a switching voltage threshold of the first semiconductor element of the first semiconductor module, and the fourth semiconductor element having a switching voltage threshold that is higher than a switching voltage threshold of the third semiconductor element of the first semiconductor module; and a first busbar that connects an external terminal of the first semiconductor element of the first semiconductor module to an external terminal of the second semiconductor element of the second semiconductor module in parallel to a first common terminal; and a second busbar that connects an external terminal of the third semiconductor element of the first semiconductor module to an external terminal of the fourth semiconductor element of the second semiconductor module in parallel to a second common terminal, wherein an inductance of a current path from the first common terminal to the first semiconductor element in the first semiconductor module is lower than an inductance of a current path from the first common terminal to the second semiconductor element in the second semiconductor module, and an inductance of a current path from the second common terminal to the third semiconductor element of the first semiconductor module is higher than an inductance of a current path from the second common terminal to the fourth semiconductor element of the second semiconductor module. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first semiconductor module; a second semiconductor module housing a second semiconductor element that has a switching voltage threshold that is lower than a switching voltage threshold of a first semiconductor element of the first semiconductor module; and a busbar that connects respective external terminals of the first semiconductor module and the second semiconductor module in parallel to a common terminal, wherein the second semiconductor module is connected to a connection point on the busbar at which an inductance of a current path to the common terminal is greater than an inductance of a current path from a connection point of the first semiconductor module to the common terminal, wherein a difference between the switching voltage threshold of the first semiconductor element housed in the first semiconductor module and the switching voltage threshold of the second semiconductor element housed in the second semiconductor module is inversely related to a difference between inductances of current paths from the common terminal of the busbar to the connection points of the respective semiconductor modules, and when the difference between the switching voltage threshold of the first semiconductor element housed in the first semiconductor module and the switching voltage threshold of the second semiconductor element housed in the second semiconductor module is 1.8 V, the difference between inductances of current paths from the common terminal of the busbar to the connection points of the respective semiconductor modules is 10 nH.
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9. A semiconductor device comprising:
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a first semiconductor module and a second semiconductor module that each include a first semiconductor element connected between a first external terminal and a second external terminal and a second semiconductor element connected between the second external terminal and a third external terminal; a first busbar that connects the first external terminal of the first semiconductor module and the first external terminal of the second semiconductor module in parallel to a first common terminal; a second busbar that connects the second external terminal of the first semiconductor module and the second external terminal of the second semiconductor module in parallel to a second common terminal; and a third busbar that connects the third external terminal of the first semiconductor module and the third external terminal of the second semiconductor module in parallel to a third common terminal, wherein the first semiconductor element of the first semiconductor module has a higher switching voltage threshold than the first semiconductor element of the second semiconductor module, the second semiconductor element of the first semiconductor module has a lower switching voltage threshold than the second semiconductor element of the second semiconductor module, an inductance of a current path from the first common terminal to the first semiconductor element in the first semiconductor module is lower than an inductance of a current path from the first common terminal to the first semiconductor element in the second semiconductor module, and an inductance of a current path from the third common terminal to the second semiconductor element of the first semiconductor module is higher than an inductance of a current path from the third common terminal to the second semiconductor element of the second semiconductor module. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a first semiconductor module including a first semiconductor device connected between a first external terminal and a second external terminal, and a second semiconductor device connected between the second external terminal and a third external terminal; a second semiconductor module including a first semiconductor device connected between a first external terminal and a second external terminal and a second semiconductor device connected between the second external terminal and a third external terminal; a first busbar that connects the first external terminal of the first semiconductor module and the first external terminal of the second semiconductor module in parallel to a first common terminal; a second busbar that connects the third external terminal of the first semiconductor module and the third external terminal of the second semiconductor module in parallel to a second common terminal, wherein the first semiconductor device of the first semiconductor module has a higher switching voltage threshold than the first semiconductor device of the second semiconductor module, the second semiconductor device of the first semiconductor module has a lower switching voltage threshold than the second semiconductor device of the second semiconductor module, and an inductance of a current path from the first common terminal, through the first semiconductor device in the first semiconductor module and the second semiconductor device in the second semiconductor module, to the second common terminal, is lower than an inductance of a current path from the first common terminal, through the first semiconductor device in the second semiconductor module and the second semiconductor device in the first semiconductor module, to the second common terminal. - View Dependent Claims (17)
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Specification