Transistor, liquid crystal display device, and manufacturing method thereof

• US 10,170,500 B2
• Filed: 10/04/2016
• Issued: 01/01/2019
• Est. Priority Date: 09/10/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun
• Primary Examiner(s): Hsu, Kendrick
• Application Number:
  US15/284,658
• Publication Number:
  US 20170025440A1
• Time in Patent Office: 819 Days
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

Claims

1. A display device comprising:

a transistor comprising a gate electrode, a source electrode, a drain electrode, and a semiconductor layer;

a first wiring electrically connected to the gate electrode, the first wiring extending in a first direction;

a second wiring electrically connected to the source electrode, the second wiring extending in a second direction and intersecting the first wiring;

a pixel electrode electrically connected to the drain electrode; and

a capacitor wiring having a first part extending in parallel with the first direction, and second and third parts each extending in parallel with the second direction,

wherein the pixel electrode has a first edge portion overlapping with the first part of the capacitor wiring, a second edge portion overlapping with the second part of the capacitor wiring, and a third edge portion overlapping with the third part of the capacitor wiring,

wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, and

wherein the semiconductor layer overlaps with an entirety of the pixel electrode.

2. The display device according to claim 1,

wherein the second and third parts extend beyond a fourth end portion of the pixel electrode in the second direction.

3. The display device according to claim 2, wherein at least one of the second and third parts comprises a bent portion or a curved portion.

4. The display device according to claim 1, wherein the semiconductor layer comprises an oxide semiconductor.

5. The display device according to claim 4, wherein the oxide semiconductor comprises indium and zinc.

6. The display device according to claim 1, wherein the pixel electrode is electrically connected to the drain electrode with an interlayer insulator interposed therebetween.

7. A display device comprising:

a transistor comprising a gate electrode, a source electrode, a drain electrode, and a semiconductor layer;

a first wiring electrically connected to the gate electrode, the first wiring extending in a first direction;

a second wiring electrically connected to the source electrode, the second wiring extending in a second direction and intersecting the first wiring;

an interlayer insulating over the semiconductor layer, the first wiring and the second wiring, the insulating layer being partly in contact with the semiconductor layer;

a pixel electrode electrically connected to the drain electrode, the pixel electrode being provided over the insulating layer; and

a capacitor wiring having a first part extending in parallel with the first direction, and second and third parts each extending in parallel with the second direction,

wherein the pixel electrode has a first edge portion overlapping with the first part of the capacitor wiring, a second edge portion overlapping with the second part of the capacitor wiring, and a third edge portion overlapping with the third part of the capacitor wiring,

wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, and

wherein the semiconductor layer overlaps with an entirety of the pixel electrode.

8. The display device according to claim 7,

wherein the second and third parts extend beyond a fourth end portion of the pixel electrode in the second direction.

9. The display device according to claim 8, wherein at least one of the second and third parts comprises a bent portion or a curved portion.

10. The display device according to claim 7, wherein the semiconductor layer comprises an oxide semiconductor.

11. The display device according to claim 10, wherein the oxide semiconductor comprises indium and zinc.

12. The display device according to claim 10, wherein the insulating layer comprises at least one of materials which are included into the oxide semiconductor.

13. The display device according to claim 7, wherein the pixel electrode is electrically connected to the drain electrode with an interlayer insulator interposed therebetween.

14. A display device comprising:

a transistor comprising a gate electrode, a source electrode, a drain electrode, and a semiconductor layer;

a first wiring electrically connected to the gate electrode, the first wiring extending in a first direction;

an interlayer insulating layer provided between the gate electrode and the semiconductor layer, the insulating layer being in contact with the semiconductor layer;

a second wiring electrically connected to the source electrode, the second wiring extending in a second direction and intersecting the first wiring;

a pixel electrode electrically connected to the drain electrode; and

a capacitor wiring having a first part extending in parallel with the first direction, and second and third parts each extending in parallel with the second direction,

wherein the pixel electrode has a first edge portion overlapping with the first part of the capacitor wiring, a second edge portion overlapping with the second part of the capacitor wiring, and a third edge portion overlapping with the third part of the capacitor wiring,

wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, and

wherein the semiconductor layer overlaps with an entirety of the pixel electrode.

15. The display device according to claim 14, wherein the semiconductor layer comprises an oxide semiconductor.

16. The display device according to claim 15, wherein the oxide semiconductor comprises a material selected from the group consists of gallium, indium and zinc.

17. The display device according to claim 15, wherein the insulating layer comprises at least one of materials which are included into the oxide semiconductor.