Semiconductor device and method for manufacturing the same

• US 10,170,598 B2
• Filed: 03/01/2016
• Issued: 01/01/2019
• Est. Priority Date: 11/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Endo, Yuta, Sasaki, Toshinari, Noda, Kosei
• Primary Examiner(s): Nicely, Joseph C
• Assistant Examiner(s): Goodwin, David
• Application Number:
  US15/057,457
• Publication Number:
  US 20160181406A1
• Time in Patent Office: 1,036 Days
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxynitride semiconductor layer over an oxide insulating layer formed over an insulating surface;

forming a gate insulating layer over the oxynitride semiconductor layer; and

forming a gate electrode over the gate insulating layer,

wherein the oxynitride semiconductor layer includes a channel region, a source region, and a drain region,

wherein an amount of oxygen released by the oxide insulating layer in thermal desorption spectroscopy is greater than or equal to 1.0×

10²⁰ atoms/cm³, and

wherein the oxynitride semiconductor layer is an n-type semiconductor layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the source region and the drain region are formed in the oxynitride semiconductor layer by reducing resistance of part of the oxynitride semiconductor layer.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the oxynitride semiconductor layer is formed by a sputtering method with the use of a gas containing nitrogen.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the oxynitride semiconductor layer is formed by introduction of nitrogen into an oxide semiconductor layer by an ion doping method or an ion implantation method.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the oxynitride semiconductor layer is formed in such a manner that nitrogen is introduced into an oxide semiconductor layer by exposing the oxide semiconductor layer to plasma generated by nitrogen or a gas containing nitrogen.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the oxynitride semiconductor layer includes two or more elements selected from In, Zn, Ga, and Sn.

7. The method for manufacturing a semiconductor device according to claim 1, wherein a concentration of nitrogen contained in the oxynitride semiconductor layer is greater than or equal to 0.1 atomic % and less than or equal to 30 atomic %.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxynitride semiconductor layer over an oxide insulating layer formed over an insulating surface;

forming a gate insulating layer over the oxynitride semiconductor layer; and

forming a gate electrode over the gate insulating layer,

wherein the oxynitride semiconductor layer includes a channel region, a source region, and a drain region, and

wherein an amount of oxygen released by the oxide insulating layer in thermal desorption spectroscopy is greater than or equal to 1.0 ×

10²⁰ atoms/cm³.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the source region and the drain region are formed in the oxynitride semiconductor layer by reducing resistance of part of the oxynitride semiconductor layer.

10. The method for manufacturing a semiconductor device according to claim 8, wherein the oxynitride semiconductor layer is formed by a sputtering method with the use of a gas containing nitrogen.

11. The method for manufacturing a semiconductor device according to claim 8, wherein the oxynitride semiconductor layer is formed by introduction of nitrogen into an oxide semiconductor layer by an ion doping method or an ion implantation method.

12. The method for manufacturing a semiconductor device according to claim 8, wherein the oxynitride semiconductor layer is formed in such a manner that nitrogen is introduced into an oxide semiconductor layer by exposing the oxide semiconductor layer to plasma generated by nitrogen or a gas containing nitrogen.

13. The method for manufacturing a semiconductor device according to claim 8, wherein the oxynitride semiconductor layer includes two or more elements selected from In, Zn, Ga, and Sn.

14. The method for manufacturing a semiconductor device according to claim 8, wherein a concentration of nitrogen contained in the oxynitride semiconductor layer is greater than or equal to 0.1 atomic % and less than or equal to 30 atomic %.