Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers
First Claim
1. A method for making a semiconductor device comprising:
- forming at least one double-barrier resonant tunneling diode (DBRTD) byforming a first doped semiconductor layer,forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a first intrinsic semiconductor layer on the first barrier layer,forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a second intrinsic semiconductor layer on the second barrier layer,forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a third intrinsic semiconductor layer on the third barrier layer,forming a fourth barrier layer on the third intrinsic semiconductor layer, andforming a second doped semiconductor layer on the fourth barrier layer.
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Abstract
A method for making a semiconductor device may include forming at least one a double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, and a forming first barrier layer on the first doped semiconductor layer and including a superlattice. The method may further include forming a first intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the first intrinsic semiconductor layer and also comprising the superlattice, forming a second intrinsic semiconductor layer on the second barrier layer, and forming a third barrier layer on the second intrinsic semiconductor layer and also comprising the superlattice. The method may further include forming a third intrinsic semiconductor layer on the third barrier layer, forming a fourth barrier layer on the third intrinsic semiconductor layer, and forming a second doped semiconductor layer on the fourth barrier layer.
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Citations
20 Claims
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1. A method for making a semiconductor device comprising:
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming a first intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming a second intrinsic semiconductor layer on the second barrier layer, forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming a third intrinsic semiconductor layer on the third barrier layer, forming a fourth barrier layer on the third intrinsic semiconductor layer, and forming a second doped semiconductor layer on the fourth barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for making a semiconductor device comprising:
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming a first intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming a second intrinsic semiconductor layer on the second barrier layer, forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming a third intrinsic semiconductor layer on the third barrier layer, forming a fourth barrier layer on the third intrinsic semiconductor layer, and forming a second doped semiconductor layer on the fourth barrier layer, the first and second doped semiconductor layers having the same dopant conductivity type. - View Dependent Claims (12, 13, 14, 15)
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16. A method for making a semiconductor device comprising:
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming a first intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming a second intrinsic semiconductor layer on the second barrier layer, forming a third barrier layer on the second intrinsic semiconductor layer and also comprising the superlattice, forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming a fourth barrier layer on the third intrinsic semiconductor layer, and forming a second doped semiconductor layer on the fourth barrier layer, the first and second doped semiconductor layers having opposite dopant conductivity types. - View Dependent Claims (17, 18, 19, 20)
Specification