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Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers

  • US 10,170,604 B2
  • Filed: 08/07/2017
  • Issued: 01/01/2019
  • Est. Priority Date: 08/08/2016
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming at least one double-barrier resonant tunneling diode (DBRTD) byforming a first doped semiconductor layer,forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a first intrinsic semiconductor layer on the first barrier layer,forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a second intrinsic semiconductor layer on the second barrier layer,forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming a third intrinsic semiconductor layer on the third barrier layer,forming a fourth barrier layer on the third intrinsic semiconductor layer, andforming a second doped semiconductor layer on the fourth barrier layer.

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