Manufacturing method of semiconductor memory device
First Claim
1. A manufacturing method of a semiconductor device comprising:
- forming a transistor comprises a gate electrode;
forming a cylindrical semiconductor consisting of an oxide semiconductor on and in contact with the gate electrode;
forming a gate insulating film covering a side surface and a top surface of the cylindrical semiconductor; and
forming a first conductor covering the side surface of the cylindrical semiconductor with the gate insulating film therebetween.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a highly integrated semiconductor memory device. To provide a semiconductor memory device which can hold stored data even when power is not supplied. To provide a semiconductor memory device which has a large number of write cycles. The degree of integration of a memory cell array is increased by forming a memory cell including two transistors and one capacitor which are arranged three-dimensionally. The electric charge accumulated in the capacitor is prevented from being leaking by forming a transistor for controlling the amount of electric charge of the capacitor in the memory cell using a wide-gap semiconductor having a wider band gap than silicon. Accordingly, a semiconductor memory device which can hold stored data even when power is not supplied can be provided.
-
Citations
10 Claims
-
1. A manufacturing method of a semiconductor device comprising:
-
forming a transistor comprises a gate electrode; forming a cylindrical semiconductor consisting of an oxide semiconductor on and in contact with the gate electrode; forming a gate insulating film covering a side surface and a top surface of the cylindrical semiconductor; and forming a first conductor covering the side surface of the cylindrical semiconductor with the gate insulating film therebetween. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A manufacturing method of a semiconductor device comprising:
-
forming a transistor comprises a gate electrode; forming a columnar semiconductor consisting of an oxide semiconductor on and in contact with the gate electrode; forming a gate insulating film covering a side surface and a top surface of the columnar semiconductor; and forming a first conductor covering the side surface of the columnar semiconductor with the gate insulating film therebetween. - View Dependent Claims (7, 8, 9, 10)
-
Specification