Semiconductor light emitting device package and method for manufacturing the same

• US 10,170,663 B2
• Filed: 07/25/2017
• Issued: 01/01/2019
• Est. Priority Date: 01/05/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Il Woo, Kim, Jung Hoon
• Primary Examiner(s): Oh, Jaehwan
• Assistant Examiner(s): Parker, John M
• Application Number:
  US15/659,265
• Publication Number:
  US 20170330998A1
• Time in Patent Office: 525 Days
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a growth substrate, forming a reflective layer on a first surface of the light emitting structure corresponding to a surface of the second conductivity-type semiconductor layer, forming bumps on the first surface, the bumps being electrically connected to the first or second conductivity-type semiconductor layer and protruding from the reflective layer, bonding a support substrate to the bumps on the first surface, removing the growth substrate, bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed, and removing the support substrate. The reflective layer covers at least portions of side surfaces of the light emitting structure and the bumps.

Claims

1. A semiconductor light emitting device package, comprising:

a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a plurality of bumps disposed on a first surface of the light emitting structure and electrically connected to the first or the second conductivity-type semiconductor layer;

a reflective layer disposed on the first surface of the light emitting structure, disposed on at least a portion of side surfaces of the light emitting structure, and disposed on at least a portion of bump side surfaces of the plurality of bumps;

a wavelength conversion layer disposed on a second surface of the light emitting structure opposite the first surface of the light emitting structure; and

a light transmissive substrate disposed on the wavelength conversion layer,

wherein each of the side surfaces of the light emitting structure is in contact with the reflective layer and the wavelength conversion layer.

2. The semiconductor light emitting device package of claim 1, wherein at least one of the side surfaces of the light emitting structure includes at least two inclined surfaces having different inclinations.

3. The semiconductor light emitting device package of claim 2, wherein a first boundary between the at least two inclined surfaces corresponds to a second boundary between the reflective layer and the wavelength conversion layer.

4. The semiconductor light emitting device package of claim 1, wherein a bottom surface and side surfaces of the reflective layer are configured to form a portion of exterior surfaces of the semiconductor light emitting device package.

5. The semiconductor light emitting device package of claim 1, wherein each of the plurality of bumps has a first thickness which is within a range from 50 μ

m to 120 μ

m.

6. The semiconductor light emitting device package of claim 1, wherein the light transmissive substrate and the wavelength conversion layer have a second thickness which is within a range from 40 μ

m to 120 μ

m.

7. The semiconductor light emitting device package of claim 1, wherein the wavelength conversion layer includes a quantum dot.

8. The semiconductor light emitting device package of claim 1, wherein the light transmissive substrate is formed of at least one of glass, quartz, transparent resin, SiO₂, SiN, Al₂O₃, HfO, TiO₂ or ZrO.

9. The semiconductor light emitting device package of claim 1, wherein the light transmissive substrate has a uniform thickness.

10. The semiconductor light emitting device package of claim 1, wherein a boundary between the reflective layer and the wavelength conversion layer is disposed on the side surfaces of the light emitting structure and parallel to the first surface.

11. A semiconductor light emitting device package, comprising:

a light emitting structure;

a plurality of bumps disposed on a first surface of the light emitting structure and electrically connected to the light emitting structure;

a reflective layer disposed on the first surface of the light emitting structure and disposed on at least a portion of side surfaces of the light emitting structure;

a wavelength conversion layer disposed on a second surface of the light emitting structure opposite the first surface of the light emitting structure; and

a light transmissive substrate disposed on the wavelength conversion layer,

wherein each of the side surfaces of the light emitting structure is in contact with the reflective layer and the wavelength conversion layer.

12. The semiconductor light emitting device package of claim 11, wherein the side surfaces of the light emitting structure are covered by the reflective layer and the wavelength conversion layer.

13. The semiconductor light emitting device package of claim 11, wherein a bottom surface and side surfaces of the reflective layer are configured to form a portion of exterior surfaces of the semiconductor light emitting device package.

14. The semiconductor light emitting device package of claim 11, wherein each of the plurality of bumps has a first thickness which is within a range from 50 μ

m to 120 μ

m.

15. The semiconductor light emitting device package of claim 11, wherein the light transmissive substrate and the wavelength conversion layer have a second thickness which is within a range from 40 μ

m to 120 μ

m.

16. The semiconductor light emitting device package of claim 11, wherein the wavelength conversion layer includes a quantum dot.

17. The semiconductor light emitting device package of claim 11, wherein the light transmissive substrate is formed of at least one of glass, quartz, transparent resin, SiO₂, SiN, Al₂O₃, HfO, TiO₂ or ZrO.

18. The semiconductor light emitting device package of claim 11, wherein the light transmissive substrate has a uniform thickness.

19. A semiconductor light emitting device package, comprising:

a light emitting structure;

a plurality of bumps disposed on a first surface of the light emitting structure and electrically connected to the light emitting structure;

a reflective layer disposed on the first surface of the light emitting structure and disposed on at least a portion of side surfaces of the light emitting structure;

a wavelength conversion layer disposed on a second surface of the light emitting structure opposite the first surface of the light emitting structure; and

a light transmissive substrate disposed on the wavelength conversion layer,

wherein at least one of the side surfaces of the light emitting structure includes at least two inclined surfaces having different inclinations.

20. The semiconductor light emitting device package of claim 19, wherein a first boundary between the at least two inclined surfaces corresponds to a second boundary between the reflective layer and the wavelength conversion layer.