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Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow

  • US 10,174,439 B2
  • Filed: 03/22/2017
  • Issued: 01/08/2019
  • Est. Priority Date: 07/25/2011
  • Status: Active Grant
First Claim
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1. A method, performed in sequential order of manufacturing a semiconductor device, the method comprising:

  • first step, providing a silicon substrate in a chamber;

    second step, cleaning a surface of the silicon substrate with a flow of hydrogen in the chamber;

    third step, flowing a first amount of ammonia in the chamber while the hydrogen is still flowing into the chamber, wherein the first amount of ammonia forms nitrogen-silicon bonds at the surface of the silicon substrate;

    fourth step, flowing a first amount of trimethylaluminum (Al2(CH3)6) into the chamber while the hydrogen is still flowing into the chamber; and

    fifth step, flowing a second amount of ammonia into the chamber, wherein the second amount of ammonia is greater than the first amount of ammonia by volume, and an initial AIN nuclear layer grows on the silicon substrate.

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