Selective deposition of silicon oxide
First Claim
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1. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
- providing a substrate having the exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups, the primary amine groups formed by a technique selected from the group consisting of;
exposing a deposited silicon nitride surface to ammonia and igniting a plasma, andexposing a deposited silicon nitride surface to a mixture of nitrogen and ammonia and igniting a plasma;
exposing the substrate to an aminosilane to selectively adsorb the aminosilane to the exposed silicon oxide surface relative to the primary amine groups on the exposed silicon nitride surface; and
exposing the substrate to an oxidizing agent under conditions preventing deposition on surfaces having primary amine groups to form silicon oxide by thermal atomic layer deposition on the exposed silicon oxide surface relative to the exposed silicon nitride surface.
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Abstract
Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.
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15 Claims
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1. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
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providing a substrate having the exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups, the primary amine groups formed by a technique selected from the group consisting of; exposing a deposited silicon nitride surface to ammonia and igniting a plasma, and exposing a deposited silicon nitride surface to a mixture of nitrogen and ammonia and igniting a plasma; exposing the substrate to an aminosilane to selectively adsorb the aminosilane to the exposed silicon oxide surface relative to the primary amine groups on the exposed silicon nitride surface; and exposing the substrate to an oxidizing agent under conditions preventing deposition on surfaces having primary amine groups to form silicon oxide by thermal atomic layer deposition on the exposed silicon oxide surface relative to the exposed silicon nitride surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of depositing silicon oxide selectively on an exposed silicon oxide surface, the method comprising:
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providing a substrate having an exposed silicon oxide surface and an exposed silicon nitride surface, the exposed silicon nitride surface comprising primary amine groups, the primary amine groups formed by a technique selected from the group consisting of; exposing a deposited silicon nitride surface to ammonia and igniting a plasma, and exposing a deposited silicon nitride surface to a mixture of nitrogen and ammonia and igniting a plasma; performing a thermal atomic layer deposition reaction to selectively form silicon oxide on the exposed silicon oxide surface relative to the exposed silicon nitride surface, the thermal atomic layer deposition reaction comprising; exposing the substrate to an aminosilane to adsorb the aminosilane selectively to the exposed silicon oxide surface without reacting the aminosilane with the primary amine groups on the exposed silicon nitride surface; and exposing the substrate to an oxidizing agent to react with adsorbed aminosilane to form the silicon oxide selectively on the exposed silicon oxide surface relative to the exposed silicon nitride surface. - View Dependent Claims (13, 14, 15)
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Specification