Formation of advanced interconnects
First Claim
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1. A method for fabricating an advanced metal conductor structure comprising:
- providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of interconnect metal conductor structures which interconnect conductive line layers to other elements of an integrated circuit;
creating an adhesion promoting layer disposed on the patterned dielectric layer;
depositing a ruthenium metal layer disposed on the adhesion promoting layer;
using a physical vapor deposition process to deposit a cobalt layer disposed on the ruthenium metal layer; and
performing a thermal anneal which reflows the cobalt layer to completely fill a remainder portion of the set of interconnect metal conductor features to form the set of interconnect metal conductor structures.
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Abstract
A method for fabricating an advanced metal conductor structure is described. A pattern in a dielectric layer is provided. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is created over the patterned dielectric. A ruthenium layer is deposited over the adhesion promoting layer. Using a physical vapor deposition process, a cobalt layer is deposited over the ruthenium layer. A thermal anneal is performed which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures.
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Citations
15 Claims
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1. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of interconnect metal conductor structures which interconnect conductive line layers to other elements of an integrated circuit; creating an adhesion promoting layer disposed on the patterned dielectric layer; depositing a ruthenium metal layer disposed on the adhesion promoting layer; using a physical vapor deposition process to deposit a cobalt layer disposed on the ruthenium metal layer; and performing a thermal anneal which reflows the cobalt layer to completely fill a remainder portion of the set of interconnect metal conductor features to form the set of interconnect metal conductor structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification