Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods
First Claim
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1. An ultrasound device, comprising:
- an integrated circuit having a transistor gate layer formed over a substrate;
a plurality of metallization layers disposed above the transistor gate layer; and
an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer further comprising;
a bottom electrode formed above a first of the plurality of metallization layers;
a cavity disposed above the bottom electrode, the cavity representing a partial void of a second of the plurality of metallization layers; and
a top electrode disposed above the cavity and formed below a third of the plurality of metallization layers.
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Abstract
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
175 Citations
10 Claims
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1. An ultrasound device, comprising:
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an integrated circuit having a transistor gate layer formed over a substrate; a plurality of metallization layers disposed above the transistor gate layer; and an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer further comprising; a bottom electrode formed above a first of the plurality of metallization layers; a cavity disposed above the bottom electrode, the cavity representing a partial void of a second of the plurality of metallization layers; and a top electrode disposed above the cavity and formed below a third of the plurality of metallization layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification