Light-emitting diode and a method for manufacturing the same

• US 10,177,272 B2
• Filed: 08/07/2017
• Issued: 01/08/2019
• Est. Priority Date: 07/23/2015
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Genesis Photonics Inc.
• Inventors: Ting, Shao-Ying, Huang, Jing-En
• Primary Examiner(s): Yi, Changhyun
• Application Number:
  US15/670,050
• Publication Number:
  US 20170338375A1
• Time in Patent Office: 519 Days
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68336 involving stretching of the auxiliary support post dicing
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.

Claims

1. A method for manufacturing a light-emitting diode (LED), comprising:

providing a LED wafer comprising a substrate and a plurality of light-emitting units formed thereon;

removing at least a portion of the substrate;

fixing the LED wafer on an extensible membrane, wherein the light-emitting unit faces the extensible membrane;

breaking the LED wafer to form a plurality of LED dices separated from each other, wherein each LED dice comprises at least one light-emitting unit; and

expanding the extensible membrane to make a distance between any two of the LED dices become larger,

wherein a fixing piece is pasted on a surface of the substrate before the step of fixing the LED wafer on the extensible membrane, and the LED wafer is broken together with the fixing piece to form the LED dices.

2. The method according to claim 1, further comprising

removing the fixing piece after breaking the LED wafer.

3. The method according to claim 1, wherein the step of removing the portion of the substrate comprises a grinding step and a polishing step.

4. The method according to claim 1, further comprising a waxing step for adhering the LED wafer to a crafting table.

5. The method according to claim 4, further comprising a dewaxing step for detaching the LED wafer from the crafting table.

6. The method according to claim 1, wherein the step of removing the fixing piece is implemented by irradiating a UV light on the fixing piece to decompose a viscose on the fixing piece and then removing the fixing piece from the LED dices.

7. The method according to claim 1, wherein after the step of removing the portion of the substrate, the substrate has a thickness 2-20 times larger than a thickness of the light-emitting unit.

8. The method according to claim 1, wherein after the step of removing the portion of the substrate, the substrate is thinned down to have a thickness smaller than or equal to 100 μ

m.

9. The method according to claim 1, wherein before the step of breaking the LED wafer, the LED wafer is cut into a plurality of blocks by way of laser scribing.

10. The method according to claim 1, wherein a range of the beam-divergence angle of the LED dices is centralized between 115°

-140°

after the step of removing the portion of the substrate.

11. The method according to claim 10, wherein a range of the beam-divergence angle of the LED dices is centralized between 115°

-130°

after the step of removing the portion of the substrate.

12. A manufacturing method of light-emitting diode (LED), comprising:

providing an LED wafer comprising a substrate and a light-emitting unit formed on the substrate;

removing at least a portion of the substrate;

pasting a fixing piece on a surface of the LED wafer;

fixing the LED wafer to an extensible membrane, wherein the light-emitting unit faces the extensible membrane, and the LED wafer is disposed between the fixing piece and the extensible membrane, and the fixing piece, the LED wafer and the extensible membrane form a complex;

breaking the LED wafer in the complex to form a plurality of LED dices;

removing the fixing piece from the complex to remain the LED dices disposed on the extensible membrane; and

expanding the extensible membrane to make a distance between any two of the LED dices become larger.

13. The method according to claim 12, wherein the step of removing the portion of the substrate comprises a grinding step and a polishing step.

14. The method according to claim 12, further comprising a waxing step for adhering the LED wafer to a crafting table and a dewaxing step for detaching the LED wafer from the crafting table.

15. The method according to claim 12, wherein the step of removing the fixing piece is implemented by irradiating a UV light on the fixing piece to decompose a viscose on the fixing piece and then removing the fixing piece from the LED dices.

16. The method according to claim 12, wherein after the step of removing the portion of the substrate, the substrate has a thickness 2-20 times larger than a thickness of the light-emitting unit.

17. The method according to claim 12, wherein after the step of removing the portion of the substrate, the substrate is thinned down to have a thickness smaller than or equal to 100 μ

m.

18. The method according to claim 12, wherein before the step of breaking the LED wafer, the LED wafer is cut into a plurality of blocks by way of laser scribing.

19. The method according to claim 12, wherein a range of the beam-divergence angle of the LED dices is centralized between 115°

-140°

after the step of removing the portion of the substrate.

20. The method according to claim 19, wherein a range of the beam-divergence angle of the LED dices is centralized between 115°

-130°

after the step of removing the portion of the substrate.