Light emitting diode

• US 10,177,280 B2
• Filed: 04/20/2017
• Issued: 01/08/2019
• Est. Priority Date: 08/03/2016
• Status: Active Grant

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Peng, Chien-Chung, Huang, Chien-Shiang, Shen, Chia-Hui, Hung, Tzu-Chien
• Primary Examiner(s): Munoz, Andres
• Application Number:
  US15/492,164
• Publication Number:
  US 20180040785A1
• Time in Patent Office: 628 Days
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.

Claims

1. A light emitting diode, comprising:

a light emitting chip having a light exiting surface, a first electrode and a second electrode, the first electrode and the second electrode being located opposite to the light exiting surface;

a first reflecting layer directly surrounding and contacting a periphery of the light emitting chip and a periphery of the first and the second electrodes, the first reflecting layer having a first surface and a second surface opposite to the first surface, the second surface is positioned lower in height with respect to the light exiting surface;

a second reflecting layer also directly surrounding and contacting the periphery of the light emitting chip, the second reflecting layer having a bottom surface and a top surface opposite to the bottom surface, the bottom surface directly attached to the second surface, the top surface being a topmost surface of the second reflecting layer and coplanar with the light exiting surface, a reflectivity of the second reflecting layer less than a reflectivity of the first reflecting layer, bottoms of the first electrode and the second electrode exposed from the first reflecting layer;

a first encapsulation layer covering the light emitting surface and the entire top surface; and

a second encapsulation layer covering the first encapsulation layer;

wherein, the second reflecting layer is made of a material having a reflectivity less than 40 percent, a vertical height of the second reflecting layer is greater than 100 nm.

2. The light emitting diode of claim 1, wherein the first surface is coplanar with the bottoms of both the first electrode and the second electrode.

3. The light emitting diode of claim 2, wherein the first encapsulation layer is made of transparent thermal conductive materials.

4. The light emitting diode of claim 1, wherein a vertical height of the light emitting chip is represented with H, a vertical height of the first reflecting layer is represented with H1, and the vertical height of the second reflecting layer is represented with H2, the vertical height of the light emitting chip is a sum of the vertical height of the first reflecting layer and the vertical height of the second reflecting layer.

5. The light emitting diode of claim 1, wherein the second encapsulation layer is made of adhesives, a vertical height of the second encapsulation layer is greater than a vertical height of the first encapsulation layer.

6. The light emitting diode of claim 1, wherein the second encapsulation layer includes phosphors therein.

7. The light emitting diode of claim 1, wherein the light emitting diode has an axis, the light emitting chip, the first reflecting layer, the second reflecting layer, the first encapsulation layer and the second encapsulation layer are symmetrical about the axis.

8. The light emitting diode of claim 1, wherein an outer surface of the first reflecting layer, the second reflecting layer, the first encapsulation layer and the second encapsulation layer are coplanar.

9. The light emitting diode of claim 1, wherein the first electrode is a P electrode, and the second electrode is an N electrode.

10. The light emitting diode of claim 1, wherein the first electrode is an N electrode, and the second electrode is a P electrode.