Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
First Claim
1. A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing, said surface being patterned with a recess having side walls and a bottom, said ALD processing being constituted by a plurality of atomic layer deposition cycles, each cycle comprising in the following sequence of steps (i) to (iii) using a first precursor containing silicon in its molecule, a second precursor containing no silicon in its molecule, and a reactant for nitriding the precursors, said reactant being neither first nor second precursor, being nitriding gas selected from the group consisting of NH3, NxHy, and NxHyCz (x, y, and z are integers) excluding N2, and having a smaller molecular size than the second precursor, each cycle being defined as a cycle forming a monolayer using the first precursor and a monolayer using the second precursor, wherein the reactant is continuously supplied to the reaction space throughout steps (i) to (iii):
- (i) adsorbing a non-excited gas of the first precursor onto a patterned surface of a substrate in a reaction space by feeding the first precursor to the reaction space in a pulse;
(ia) purging the reaction space between steps (i) and (ib) to purge therefrom the first precursor present in the reaction space;
(ib) applying RF power to the reaction space between steps (ia) and (ii) to excite the reactant to conduct nitridization of the first precursor;
(ii) adsorbing a non-excited gas of the second precursor onto the first-precursor-adsorbed surface of the substrate in the reaction space by feeding the second precursor to the reaction space in a pulse so as to form Si—
N—
X (X represents an element other than silicon and metal in the second precursor);
(iia) purging the reaction space between steps (ii) and (iii) to purge therefrom the second precursor present in the reaction space where the first precursor is already purged;
(iii) applying RF power to the reaction space between steps (iia) and (iv) to expose the non-excited second-precursor-adsorbed surface of the substrate to an excited gas of the reactant to nitride the precursors adsorbed on the surface of the substrate;
said ALD processing further comprising (iv) repeating the cycle constituted by steps (i) to (iii) to form a film on the patterned surface of the substrate, step (iv) further comprising purging the reaction space between steps (iii) and (i) when repeating the cycle.
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Abstract
A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
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Citations
11 Claims
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1. A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing, said surface being patterned with a recess having side walls and a bottom, said ALD processing being constituted by a plurality of atomic layer deposition cycles, each cycle comprising in the following sequence of steps (i) to (iii) using a first precursor containing silicon in its molecule, a second precursor containing no silicon in its molecule, and a reactant for nitriding the precursors, said reactant being neither first nor second precursor, being nitriding gas selected from the group consisting of NH3, NxHy, and NxHyCz (x, y, and z are integers) excluding N2, and having a smaller molecular size than the second precursor, each cycle being defined as a cycle forming a monolayer using the first precursor and a monolayer using the second precursor, wherein the reactant is continuously supplied to the reaction space throughout steps (i) to (iii):
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(i) adsorbing a non-excited gas of the first precursor onto a patterned surface of a substrate in a reaction space by feeding the first precursor to the reaction space in a pulse; (ia) purging the reaction space between steps (i) and (ib) to purge therefrom the first precursor present in the reaction space; (ib) applying RF power to the reaction space between steps (ia) and (ii) to excite the reactant to conduct nitridization of the first precursor; (ii) adsorbing a non-excited gas of the second precursor onto the first-precursor-adsorbed surface of the substrate in the reaction space by feeding the second precursor to the reaction space in a pulse so as to form Si—
N—
X (X represents an element other than silicon and metal in the second precursor);(iia) purging the reaction space between steps (ii) and (iii) to purge therefrom the second precursor present in the reaction space where the first precursor is already purged; (iii) applying RF power to the reaction space between steps (iia) and (iv) to expose the non-excited second-precursor-adsorbed surface of the substrate to an excited gas of the reactant to nitride the precursors adsorbed on the surface of the substrate; said ALD processing further comprising (iv) repeating the cycle constituted by steps (i) to (iii) to form a film on the patterned surface of the substrate, step (iv) further comprising purging the reaction space between steps (iii) and (i) when repeating the cycle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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- Resources
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Current AssigneeASM IP Holding B.V. (ASM International NV)
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Original AssigneeASM IP Holding B.V. (ASM International NV)
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InventorsFukazawa, Atsuki
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Primary Examiner(s)Wieczorek, Michael P
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Application NumberUS14/090,750Publication NumberTime in Patent Office1,876 DaysField of SearchUS Class CurrentCPC Class CodesC23C 16/345 Silicon nitrideC23C 16/4554 Plasma being used non-conti...
