Apparatus for testing magnetic field sensor on wafer and method thereof

• US 10,180,467 B2
• Filed: 01/21/2014
• Issued: 01/15/2019
• Est. Priority Date: 07/29/2013
• Status: Active Grant

• Current Assignee: Magnachip Semiconductor Limited (Magnachip Semiconductor)
• Original Assignee: Magnachip Semiconductor Limited (Magnachip Semiconductor)
• Inventors: Kim, Dong Ho, Cho, Ki Seok
• Primary Examiner(s): Shah, Neel
• Application Number:
  US14/159,861
• Publication Number:
  US 20150028855A1
• Time in Patent Office: 1,820 Days
• Field of Search: 324202, 324212, 324260, 324262, 32475417, 32475429, 32475603, 324529
• CPC Class Codes: G01R 33/0011 comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
• CPC Class Codes: G01R 33/0052 Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips devices based on galvano-magnetic effect or the like H10N50/85

Abstract

An apparatus and a method for testing a magnetic field sensor are provided, in which the method includes arranging a coil for generating a magnetic field, applying the magnetic field to the magnetic field sensor using the coil, and detecting the magnetic field applied to the magnetic field sensor.

Claims

1. A method for testing a magnetic field sensor on a wafer, the method comprising:

arranging the magnetic field sensor inside a magnetic field of a coil having a radial direction parallel to a surface of the wafer,

wherein the magnetic field sensor is arranged away from a center point of the coil by a distance,

wherein the coil has a cross-sectional area smaller than a cross-sectional area of the wafer, and

wherein the coil is configured to apply a three-axis magnetic field to the magnetic field sensor, and the distance corresponds to a distance between the coil and the wafer such that the magnetic field sensor contacts magnetic field lines generated from the three-axis magnetic field having an incident angle of approximately 45 degrees between a Z axis and an XY coordinate plane, at a point at which the magnetic field lines meet the surface of the wafer; and

detecting the three-axis magnetic field applied to the magnetic field sensor,

wherein the coil is a single coil used in applying the three-axis magnetic field to the magnetic field sensor, and

wherein in response to the three-axis magnetic field applied to the magnetic field sensor being separated into X, Y, and Z axis components, the X, Y, and Z axis components have similar values.

2. The method of claim 1, wherein the wafer is formed on a probe card.

3. The method of claim 2, wherein a needle is connected to the probe card and is positioned away from the center point of the coil to a side of the coil.

4. The method of claim 1, further comprising arranging an additional magnetic field sensor outside an area of the coil.

5. The method of claim 1, further comprising arranging at least four magnetic field sensors including the magnetic field sensor inside the magnetic field of the coil by arranging one magnetic field sensor in each quadrant of the coil.

6. The method of claim 5, wherein the detecting further comprises detecting the three-axis magnetic field applied to each of the magnetic field sensors.

7. The method of claim 1, wherein an angle of incidence of a magnetic field line in the center of the coil is perpendicular to the surface of the wafer.

8. The method of claim 1, wherein the coil applies the three-axis magnetic field to the magnetic field sensor without requiring a separate coil to generate the X-axis direction and the Y-axis direction components of the three-axis magnetic field.

9. The method of claim 1, wherein the magnetic field sensor outputs a detected magnitude of an X-component, a Y-component, and a Z-component of the three-axis magnetic field applied by the coil.

10. The method of claim 1, wherein the three-axis magnetic field is detected with the magnetic field sensor within the area surrounded by the coil.

11. The method of claim 1, wherein the magnetic field sensor is arranged in an area of the wafer beneath an area surrounded by the coil.

12. The method of claim 1, wherein the distance corresponds to a distance between the coil and the wafer such that the magnetic field sensor contacts magnetic field lines generated from the three-axis magnetic field having an incident angle of approximately 45 degrees in the XY coordinate plane.

13. An apparatus for testing a magnetic field sensor, comprising:

a wafer comprising at least four magnetic field sensors; and

a ring-shaped coil having a radial direction parallel to surfaces of the magnetic field sensors,

wherein the ring-shaped coil has a cross-sectional area smaller than a cross-sectional area of the wafer,

wherein the magnetic field sensors are arranged inside a magnetic field of the ring-shaped coil by arranging a magnetic field sensor in each quadrant of a coil region of the ring-shaped coil for simultaneous testing,

wherein the magnetic field sensors are each positioned away from a center point of the ring-shaped coil by a distance, such that the ring-shaped coil is configured to apply a three-axis magnetic field to the magnetic field sensors,

wherein the ring-shaped coil is a single coil used in applying the three-axis magnetic field to the magnetic field sensor,

wherein in response to the three-axis magnetic field applied to the magnetic field sensor being separated into X, Y, and Z axis components, the X, Y, and Z axis components have similar values, and

wherein the distance corresponds to a distance between the coil and the wafer such that the magnetic field sensors contact magnetic field lines generated from the three-axis magnetic field having an incident angle of approximately 45 degrees between a Z-axis and an XY coordinate plane.

14. The apparatus of claim 13, further comprising:

a probe card comprising the ring-shaped coil; and

a needle connected to the probe card,

wherein the needle connected to the probe card is positioned away from the center point of the ring-shaped coil to a side of the ring-shaped coil.

15. A method for testing multi-axis magnetic field sensors on a wafer, the method comprising:

positioning the multi-axis magnetic field sensors inside a magnetic field of a coil having a radial direction parallel to a surface of the wafer and separated away from a center point of the coil by a distance, such that the coil is configured to apply a multi-axis magnetic field to the multi-axis magnetic field sensors, and a magnetic field sensor is arranged in each quadrant of the coil for testing; and

detecting the multi-axis components of the multi-axis magnetic field using the multi-axis magnetic field sensors,

wherein;

the coil has a cross-sectional area smaller than a cross-sectional area of the wafer, and the coil is a single coil used in applying a three-axis magnetic field to the magnetic field sensor,

in response to the three-axis magnetic field applied to the magnetic field sensor being separated into X, Y, and Z axis components, the X, Y, and Z axis components have similar values, and

the distance corresponds to a distance between the coil and the wafer such that the magnetic field sensors contact magnetic field lines generated from the three-axis magnetic field having an incident angle of approximately 45 degrees between a Z-axis and an XY coordinate plane.