Optical bench on substrate

• US 10,180,547 B2
• Filed: 02/23/2012
• Issued: 01/15/2019
• Est. Priority Date: 02/23/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Wan-Yu, Tseng, Chun-Hao, Chen, Hai-Ching, Bao, Tien-I
• Primary Examiner(s): Hollweg, Thomas A
• Assistant Examiner(s): El Shammaa, Mary A
• Application Number:
  US13/403,566
• Publication Number:
  US 20130223789A1
• Time in Patent Office: 2,518 Days
• Field of Search: 385 14
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4246 Bidirectionally operating package structures
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses

Abstract

An optical bench on substrate includes a substrate and a trench formed inside the substrate and having a sloping side. A reflector layer is formed over the sloping side. An optical component is mounted over the substrate. The reflector layer is configured to reflect an electromagnetic wave to or from the optical component.

Claims

1. An optical bench on substrate, comprising:

a substrate;

a trench formed inside the substrate and having a sloping side;

a reflector layer formed over the sloping side;

an optical component mounted over the substrate and outside the trench, wherein the optical component is a laser diode; and

a redistribution layer over the substrate, wherein a sidewall of the redistribution layer proximal to the sloping side of the trench is recessed from a first sidewall of the optical component, and another sidewall of the redistribution layer distal from the sloping side of the trench is extended beyond a second sidewall of the optical component opposite the first sidewall; and

a passivation layer over the redistribution layer and surrounding sidewalls of an under bump metallization (UBM) layer between the optical component and the redistribution layer,

wherein the reflector layer is configured to reflect an electromagnetic wave from the optical component.

2. The optical bench on substrate of claim 1, wherein the substrate comprises silicon.

3. The optical bench on substrate of claim 1, wherein the optical component is flip-chip mounted over the substrate.

4. The optical bench on substrate of claim 1 further comprising, a photo diode configured to receive the electromagnetic wave reflected from the reflector layer.

5. The optical bench on substrate of claim 1, further comprising a waveguide formed inside the trench wherein the waveguide is configured to guide the electromagnetic wave from the reflector layer.

6. The optical bench on substrate of claim 5, wherein the waveguide comprises an optical fiber.

7. The optical bench on substrate of claim 1, further comprising at least one through substrate via formed through the substrate.

8. The optical bench of claim 7, wherein the through substrate via is electrically connected to the redistribution layer.

9. The optical bench on substrate of claim 1, further comprising a dielectric layer between the redistribution layer and the substrate.

10. The optical bench on substrate of claim 1, wherein the sloping side has a slope angle ranging from 42°

to 48°

.

11. The optical bench on substrate of claim 1, wherein the reflector layer comprises at least one of Al, Cu, Ag, or Au.

12. A method, comprising:

forming a trench inside a substrate wherein the trench has a sloping side with a slope angle ranging from 42°

to 48°

;

forming a reflector layer over the sloping side;

depositing a redistribution layer over the substrate;

disposing an under bump metallization (UBM) layer over the redistribution layer;

depositing a passivation layer over the redistribution layer and surrounding sidewalls of the UBM layer; and

mounting an optical component over an uppermost portion of the substrate, wherein the optical component is electrically connected to a through substrate via (TSV) extending through the substrate, wherein the reflector layer is configured to reflect an electromagnetic wave from the optical component, and wherein the optical component is mounted outside the trench.

13. The method of claim 12, further comprising forming a waveguide inside the trench wherein the waveguide is configured to guide the electromagnetic wave from the reflector layer.

14. The method of claim 13, wherein the waveguide comprises polymer.

15. The method of claim 12, further comprising placing an optical fiber inside the trench as a waveguide to guide the electromagnetic wave from the reflector layer.

16. The method of claim 12, wherein the substrate comprises silicon.

17. The method of claim 12, wherein the optical component is flip-chip mounted over the substrate.

18. The method of claim 12, wherein the reflector layer comprises at least one of Al, Cu, Ag, or Au.

19. The optical bench of claim 13, wherein the waveguide covers an entirety of a bottom surface of the trench.

20. An optical bench on substrate, comprising:

a silicon substrate;

a trench formed inside the substrate and having a sloping side;

a waveguide formed inside the trench;

a laser diode mounted over the substrate;

a photo diode mounted over the substrate;

a first redistribution layer over the substrate;

a second redistribution layer over a backside of the substrate;

a first through substrate via (TSV) extending through the substrate and contacting a portion of the first redistribution layer and a portion of the second redistribution layer at a first side of the trench, wherein the laser diode is electrically connected to the first TSV;

a second TSV extending through the substrate and contacting another portion of the first redistribution layer and another portion of the second redistribution layer at a second side of the trench opposite the first side, wherein the photo diode is electrically connected to the second TSV; and

a reflector layer formed over the sloping side and configured to reflect an electromagnetic wave transmitted from the laser diode to the waveguide which is configured to further couple the electromagnetic wave to the photo diode.