Thin-film transistor and manufacturing method thereof

• US 10,181,528 B2
• Filed: 01/03/2017
• Issued: 01/15/2019
• Est. Priority Date: 12/16/2016
• Status: Expired due to Fees

• Current Assignee: Chunghwa Picture Tubes Limited (Tatung Co., Ltd.)
• Original Assignee: Chunghwa Picture Tubes Limited (Tatung Co., Ltd.)
• Inventors: Kao, Chin-Tzu, Wang, Chung-Hsu
• Primary Examiner(s): Yasmeen, Nishath
• Application Number:
  US15/396,822
• Publication Number:
  US 20180175206A1
• Time in Patent Office: 742 Days
• Field of Search: None
• CPC Class Codes: C23C 16/042 using masks
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/47635 After-treatment of these layers
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.

Claims

1. A thin-film transistor disposed on a substrate, wherein the thin-film transistor comprises:

a gate disposed on the substrate;

an insulating layer covering the gate;

a semiconductor pattern disposed on the insulating layer, wherein the semiconductor pattern has a first region and a second region opposite to each other;

a plurality of first island patterns and a plurality of second island patterns respectively directly disposed on the first region and the second region of the semiconductor pattern, wherein each of the plurality of first island patterns is in a grain form, the first island patterns are separated from each other by a plurality of first gaps, each of the plurality of second island patterns is in a grain form, the second island patterns are separated from each other by a plurality of second gaps, the first gaps expose a portion of the first region and the second gaps expose a portion of the second region, and a material of the first island patterns and the second island patterns is an insulating material;

a source electrode and a drain electrode, wherein the source electrode covers the plurality of first island patterns and fills the first gaps to be electrically connected to the first region of the semiconductor pattern, and the drain electrode covers the plurality of second island patterns and fills the second gaps to be electrically connected to the second region of the semiconductor pattern.

2. The thin-film transistor of claim 1, wherein the semiconductor pattern further has a third region connected between the first region and the second region, the source electrode and the drain electrode respectively cover the first region and the second region, the source electrode and the drain electrode expose the third region, and the thin-film transistor further comprises:

a plurality of third island patterns disposed on the third region of the semiconductor pattern, wherein the plurality of third island patterns are separated from each other by third gaps, and the third gaps expose a portion of the third region, and a material of the third island patterns is an insulating material.

3. The thin-film transistor of claim 2, wherein the thin-film transistor further comprises:

a plurality of fourth island patterns and a plurality of fifth island patterns respectively disposed at two sides of the semiconductor pattern and located on the insulating layer, wherein the source electrode and the drain electrode further respectively cover the plurality of fourth island patterns and the plurality of fifth island patterns, and a material of the fourth island patterns and the fifth island patterns is an insulating material.

4. The thin-film transistor of claim 3, wherein the thin-film transistor further comprises:

a plurality of sixth island patterns disposed on the semiconductor pattern and a portion of the insulating layer exposed by the source electrode and the drain electrode, and a material of the sixth island patterns is an insulating material.

5. The thin-film transistor of claim 1, wherein the semiconductor pattern further has a third region connected between the first region and the second region, the source and the drain expose the third region of the semiconductor pattern, and the plurality of first island patterns and the plurality of second island patterns expose the third region of the semiconductor pattern and the portion of the insulating layer exposed by the semiconductor pattern, the source, and the drain.

6. The thin-film transistor of claim 5, wherein the thin-film transistor further comprises:

a plurality of fourth island patterns and a plurality of fifth island patterns respectively disposed at two sides of the semiconductor pattern and located on the insulating layer, wherein the source and the drain further respectively cover the plurality of fourth island patterns and the plurality of fifth island patterns.

7. The thin-film transistor of claim 1, wherein the plurality of first island patterns and the plurality of second island patterns are randomly distributed on the first region and the second region of the semiconductor pattern.

8. The thin-film transistor of claim 1, wherein sizes of the plurality of island patterns are not consistent, and sizes of the second island patterns are not consistent.