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Method for manufacturing semiconductor device

  • US 10,186,619 B2
  • Filed: 09/15/2016
  • Issued: 01/22/2019
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode over a substrate;

    forming a gate insulating film over the substrate and the gate electrode;

    forming an oxide semiconductor layer over the gate insulating film by sputtering;

    performing a first heat treatment on the oxide semiconductor layer to reduce a hydrogen concentration of the oxide semiconductor layer;

    supplying oxygen into the oxide semiconductor layer during cooling after performing the first heat treatment and before forming a source electrode and a drain electrode over the oxide semiconductor layer;

    forming an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; and

    performing a second heat treatment after forming the insulating film.

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