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Light emitting diode and light emitting diode array comprising same

  • US 10,186,640 B2
  • Filed: 12/24/2015
  • Issued: 01/22/2019
  • Est. Priority Date: 12/24/2014
  • Status: Active Grant
First Claim
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1. A light emitting diode comprising:

  • a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer;

    a first electrode disposed on a portion of the first conductive semiconductor layer;

    an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; and

    a second electrode disposed on the second conductive semiconductor layer,wherein the light emitting structure includes a first mesa region, and the first conductive semiconductor layer includes a second mesa region,wherein the first electrode is disposed on a side surface of the first conductive semiconductor layer in the second mesa region,wherein the first electrode includes a first portion, a second portion and a third portion,wherein a lower surface of the first portion directly contacts an upper surface of the first conductive semiconductor layer in the second mesa region,wherein a side surface of the second portion directly contacts a side surface of the first conductive semiconductor layer in the second mesa region,wherein the third portion extends outwardly from a lower part of the second portion, andwherein a lower surface of the third portion is disposed on a same line as a lower surface of the first conductive semiconductor layer.

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