Light emitting diode and light emitting diode array comprising same
First Claim
1. A light emitting diode comprising:
- a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer;
a first electrode disposed on a portion of the first conductive semiconductor layer;
an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; and
a second electrode disposed on the second conductive semiconductor layer,wherein the light emitting structure includes a first mesa region, and the first conductive semiconductor layer includes a second mesa region,wherein the first electrode is disposed on a side surface of the first conductive semiconductor layer in the second mesa region,wherein the first electrode includes a first portion, a second portion and a third portion,wherein a lower surface of the first portion directly contacts an upper surface of the first conductive semiconductor layer in the second mesa region,wherein a side surface of the second portion directly contacts a side surface of the first conductive semiconductor layer in the second mesa region,wherein the third portion extends outwardly from a lower part of the second portion, andwherein a lower surface of the third portion is disposed on a same line as a lower surface of the first conductive semiconductor layer.
1 Assignment
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Accused Products
Abstract
Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.
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Citations
19 Claims
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1. A light emitting diode comprising:
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a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer; a first electrode disposed on a portion of the first conductive semiconductor layer; an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; and a second electrode disposed on the second conductive semiconductor layer, wherein the light emitting structure includes a first mesa region, and the first conductive semiconductor layer includes a second mesa region, wherein the first electrode is disposed on a side surface of the first conductive semiconductor layer in the second mesa region, wherein the first electrode includes a first portion, a second portion and a third portion, wherein a lower surface of the first portion directly contacts an upper surface of the first conductive semiconductor layer in the second mesa region, wherein a side surface of the second portion directly contacts a side surface of the first conductive semiconductor layer in the second mesa region, wherein the third portion extends outwardly from a lower part of the second portion, and wherein a lower surface of the third portion is disposed on a same line as a lower surface of the first conductive semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode comprising:
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a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, a second conductive semiconductor layer disposed on the active layer, a first mesa region, and a second mesa region formed in the first conductive semiconductor layer; a first electrode disposed on the second mesa region; a second electrode disposed on the first mesa region; and an insulating layer disposed between the first electrode and the second electrode, the insulating layer having a DBR structure, wherein the first electrode includes a first surface and a second surface, the first surface being in contact with the insulating layer and the second surface being opposite the first surface and having an open portion, and the second electrode includes a first surface and a second surface, the first surface having an open portion and the second surface being opposite the first surface and being in contact with the light emitting structure, wherein the first electrode includes a first portion, a second portion and a third portion, wherein a lower surface of the first portion directly contacts an upper surface of the first conductive semiconductor layer in the second mesa region, wherein a side surface of the second portion directly contacts a side surface of the first conductive semiconductor layer in the second mesa region, wherein the third portion extends outwardly from a lower part of the second portion, and wherein a lower surface of the third portion is disposed on a same line as a lower surface of the first conductive semiconductor layer. - View Dependent Claims (12)
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13. A light emitting diode array comprising:
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a circuit board; a plurality of light emitting diodes, each including; a light emitting structure disposed on the circuit board and including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer; a first electrode disposed on a portion of the first conductive semiconductor layer;
an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; anda second electrode disposed on the second conductive semiconductor layer, and an anisotropic conductive film (ACF) disposed between the circuit board and the light emitting diodes, wherein the ACF includes a base material and conductive balls provided in the base material, and the conductive balls are in contact with the circuit board and the second electrode, wherein the first electrode includes a first surface and a second surface, the first surface of the first electrode being in contact with the insulating layer and the second surface of the first electrode being opposite the first surface and having an open portion, the second electrode includes a first surface and a second surface, the first surface of the second electrode having an open portion and the second surface of the second electrode being opposite the first surface and being in contact with the light emitting structure, and wherein the first electrode of each of the light emitting diodes is connected to first electrodes of other light emitting diodes using a single wiring structure in a region oriented opposite the circuit board. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification